LOTNo. LOTNo. SCH1337 Power MOSFET 30V, 150m , 2A, Single P-Channel This Low-profile High-power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to www.onsemi.com minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 4V drive 150m 10V Pb-Free, Halogen Free and RoHS compliance 30V 255m 4.5V 2A Ultra small package SCH6 (1.6mm1.6mm0.56mmt) 292m 4V Typical Applications LCD Driver ELECTRICAL CONNECTION P-Channel Load Switch Voltage Protection 1,2,5,6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 1:Drain Parameter SymbolValue Unit 2:Drain 3:Gate Drain to Source Voltage V 30 V DSS 3 4:Source Gate to Source Voltage V 20 V GSS 5:Drain 6:Drain Drain Current (DC) I 2A D 4 Drain Current (Pulse) I 8 A DP PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 0.8 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C YN Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not TL be assumed, damage may occur and reliability may be affected. 2 : This product is designed to ESD immunity<200V*, so please take care when handling. ORDERING INFORMATION *Machine Model See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 156.2 C/W JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : July 2015 - Rev. 3 SCH1337/D SCH1337 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I =1A 1.9 S FS DS D R (on)1 I =1A, V =10V 115 150m DS D GS Static Drain to Source On-State 182 255 R (on)2 I =0.5A, V =4.5V m DS D GS Resistance R (on)3 I =0.5A, V =4V 208 292 m DS D GS Input Capacitance Ciss 172 pF Output Capacitance Coss 51 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 36 pF Turn-ON Delay Time t (on) 4.5 ns d Rise Time t 4.2 ns r See specified Test Circuit Turn-OFF Delay Time 20 ns t (off) d Fall Time 10.6 ns t f Total Gate Charge Qg 3.9 nC Gate to Source Charge Qgs 0.6 nC V =15V, V =10V, I =2A DS GS D Gate to Drain Miller Charge Qgd 0.8 nC Forward Diode Voltage V SD I =2A, V=0V 0.86 1.5 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =--15V DD IN 0V --10V I =--1A D V IN R =15 L D V OUT PW=10s D.C.1% G SCH1337 P.G 50 S www.onsemi.com 2