LOT No. LOT No. SCH1331 Power MOSFET 12V, 84m , 3A, Single P-Channel This Low-profile High-power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to www.onsemi.com minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max High speed switching 84m 4.5V 1.8V drive 12V 126m 2.5V 3A Low capacitance 230m 1.8V Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm1.6mm0.56mmt) ELECTRICAL CONNECTION Typical Applications P-Channel Battery Switch 1,2,5,6 Load Switch DC/DC Converter Lens Motor Driver 1:Drain 2:Drain 3:Gate SPECIFICATIONS 3 4:Source ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 5:Drain Parameter SymbolValue Unit 6:Drain Drain to Source Voltage V 12 V DSS 4 Gate to Source Voltage V 10 V GSS Drain Current (DC) I 3A D Drain Current (Pulse) PACKING TYPE : TL MARKING I 12 A DP PW 10 s, duty cycle 1% Power Dissipation YG When mounted on ceramic substrate P 1 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C TL Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage ORDERING INFORMATION the device. If any of these limits are exceeded, device functionality should not See detailed ordering and shipping be assumed, damage may occur and reliability may be affected. information on page 5 of this data sheet. 2 : This product is designed to ESD immunity < 200V*, so please take care when handling. *Machine Model THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : June 2015 - Rev. 2 SCH1331/D SCH1331 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V=0V 12 V BR DSS D GS Zero-Gate Voltage Drain Current I V = 12V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V = 8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V = 6V, I = 1mA 0.4 1.3 V GS DS D Forward Transconductance g V = 6V, I = 1.5A 2.7 4.5 S FS DS D R (on)1 I = 1.5A, V = 4.5V 64 84m DS D GS Static Drain to Source On-State 90 126 R (on)2 I = 0.8A, V = 2.5V m DS D GS Resistance R (on)3 I = 0.3A, V = 1.8V 135 230 m DS D GS Input Capacitance Ciss 405 pF Output Capacitance Coss 145 pF V = 6V, f=1MHz DS Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time t (on) 8.8 ns d Rise Time t 80 ns r See specified Test Circuit Turn-OFF Delay Time 41 ns t (off) d Fall Time 50 ns t f Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs 0.7 nC V = 6V, V = 4.5V, I = 2.5A DS GS D Gate to Drain Miller Charge Qgd 1.6 nC Forward Diode Voltage V SD I = 2.5A, V=0V 0.82 1.2 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --6V V IN DD 0V --4.5V I =--1.5A D V IN R =4 L D V OUT PW=10s D.C.1% G SCH1331 P.G 50 S www.onsemi.com 2