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X-On Electronics has gained recognition as a prominent supplier of RZL025P01TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RZL025P01TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RZL025P01TR ROHM

RZL025P01TR electronic component of ROHM
RZL025P01TR ROHM
RZL025P01TR MOSFETs
RZL025P01TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RZL025P01TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Med Pwr, Sw MOSFET P Chan, -12V, -2.5A
Datasheet: RZL025P01TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2046 ea
Line Total: USD 613.8 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.2046
9000 : USD 0.1958
45000 : USD 0.1947

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RZL025P01TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RZL025P01TR and other electronic components in the MOSFETs category and beyond.

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RZL025P01 Transistors 1.5V Drive Pch MOSFET RZL025P01 z Dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TUMT6 z Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YC z Application Switching z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pieces) 3000 2 RZL025P01 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 12 V DSS Gate-source voltage VGSS 10 V Continuous ID 2.5 A Drain current 1 Pulsed I 10 A DP Source current Continuous IS 0.8 A 1 (Body diode) Pulsed ISP 10 A 2 Total power dissipation P 1.0 W D Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 125 C / W When mounted on a ceramic board. 1/5 0.2Max.RZL025P01 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =10V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 12V, VGS=0V Gate threshold voltage V 0.3 1.0 V V = 6V, I = 1mA GS (th) DS D 44 61 m ID= 2.5A, VGS= 4.5V Static drain-source on-state 60 84 m ID= 1.2A, VGS= 2.5V RDS (on) resistance 81 121 m I = 1.2A, V = 1.8V D GS I = 0.5A, V = 1.5V 110 220 m D GS Forward transfer admittance Yfs 3.5 SVDS= 6V, ID= 2.5A Input capacitance C 1350 pF V = 6V iss DS Output capacitance Coss 130 pF VGS=0V Reverse transfer capacitance Crss 125 pF f=1MHz td (on) Turn-on delay time 9 ns ID= 1.2A VDD 6V tr Rise time 35 ns VGS= 4.5V t d (off) Turn-off delay time 130 ns RL 5 tf Fall time 85 ns RG=10 Total gate charge Qg 13 nC VDD 6V, ID= 2.5A Gate-source charge Qgs 2.5 nC VGS= 4.5V Gate-drain charge Q 2.0 nC RL 2.4 , RG=10 gd Pulsed z Body diode characteristics(Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage V 1.2 V I = 2.5A, V =0V SD S GS Pulsed 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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