IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 60 DS Repetitive Avalanche Rated Available R ()V = - 10 V 0.14 DS(on) GS P-Channel RoHS* Q (Max.) (nC) 34 g COMPLIANT 175 C Operating Temperature Q (nC) 9.9 gs Fast Switching Q (nC) 16 gd Ease of Paralleling Configuration Single Simple Drive Requirements S Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D commercial-industrial applications at power dissipation G D levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z34PbF Lead (Pb)-free SiHF9Z34-E3 IRF9Z34 SnPb SiHF9Z34 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 18 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 13 A C a Pulsed Drain Current I - 72 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 370 mJ AS a Repetitive Avalanche Current I - 18 A AR a Repetitive Avalanche Energy E 8.8 mJ AR Maximum Power Dissipation T = 25 C P 88 W C D c Peak Diode Recovery dV/dt dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 1.3 mH, R = 25 , I = -18 A (see fig. 12). DD J g AS c. I - 18 A, dI/dt 170 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91092 www.vishay.com S11-0513-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9Z34, SiHF9Z34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.060 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A - 2.0 - GS(th) DS GS D - 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 60 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 48 V, V = 0 V, T = 150 C - - DS GS J - 500 b Drain-Source On-State Resistance R V = - 10 V I = - 11 A -- DS(on) GS D 0.14 b Forward Transconductance g V = - 25 V, I = - 11 A 5.9 - - fs DS D S Dynamic Input Capacitance C - 1100 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 620- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -100- rss Total Gate Charge Q -- 34 g I = - 1 8 A, D Gate-Source Charge Q --V = - 10 V V = - 48 V, 9.9 nC gs GS DS b see fig. 6 and 13 Gate-Drain Charge Q --16 gd Turn-On Delay Time t -18 - d(on) Rise Time t - 120 - r V = - 30 V, I = - 18 A, DD D ns b R = 12 , R = 1.5 , see fig. 10 Turn-Off Delay Time t -20- d(off) g D Fall Time t -58- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 18 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- - 72 SM S b Body Diode Voltage V T = 25 C, I = - 18 A, V = 0 V -- - 6.3 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = - 18 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.28 0.52 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91092 2 S11-0513-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000