New Product SiR882DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( ) Q (Typ.) I (A) DS DS(on) g D Definition 0.0087 at V = 10 V 60 TrenchFET Power MOSFET GS 100 % R Tested 0.0094 at V = 7.5 V 100 60 18.3 nC GS g 100 % UIS Tested 0.0115 at V = 4.5 V 60 GS Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS DC/DC Primary Side Switch Telecom/Server 48 V, Full/Half-Bridge dc-to-dc S 6.15 mm 5.15 mm Industrial 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR882DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage 100 DS V V Gate-Source Voltage 20 GS a T = 25 C 60 C T = 70 C C 55 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 17.6 b, c T = 70 C A 13.9 A I Pulsed Drain Current 80 DM a T = 25 C 60 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.9 I Single Pulse Avalanche Current 30 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 45 AS T = 25 C 83 C T = 70 C 53 C P Maximum Power Dissipation W D b, c T = 25 C A 5.4 b, c T = 70 C 3.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 18 23 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Case (Drain) 1.0 1.5 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W. Document Number: 65932 www.vishay.com S10-2681-Rev. B, 22-Nov-10 1New Product SiR882DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 50 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.8 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0071 0.0087 GS D a R V = 7.5 V, I = 17 A 0.0076 0.0094 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 15 A 0.0092 0.0115 GS D a g V = 10 V, I = 20 A 57 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1930 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 1210 pF oss DS GS C Reverse Transfer Capacitance 65 rss V = 50 V, V = 10 V, I = 20 A 38.5 58 DS GS D Total Gate Charge Q V = 50 V, V = 7.5 V, I = 20 A 29 44 g DS GS D 18.3 27.5 nC Q Gate-Source Charge V = 50 V, V = 4.5 V, I = 20 A 5.5 gs DS GS D Q Gate-Drain Charge 7.8 gd Gate Resistance R f = 1 MHz 0.4 1.9 3.8 g t Turn-On Delay Time 12 24 d(on) Rise Time t 12 24 V = 50 V, R = 5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 36 70 d(off) Fall Time t 918 f ns t Turn-On Delay Time 13 26 d(on) Rise Time t 15 30 V = 50 V, R = 5 r DD L I 10 A, V = 7.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 70 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 80 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.75 1.1 V SD S t Body Diode Reverse Recovery Time 64 120 ns rr Body Diode Reverse Recovery Charge Q 80 160 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 24 a ns t Reverse Recovery Rise Time 40 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65932 2 S10-2681-Rev. B, 22-Nov-10