X-On Electronics has gained recognition as a prominent supplier of SIRA01DP-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SIRA01DP-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SIRA01DP-T1-GE3 Vishay

SIRA01DP-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SIRA01DP-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET N-Ch 150V Vds 16.1nC Qg Typ
Datasheet: SIRA01DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.173 ea
Line Total: USD 1.17

Availability - 22606
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22606
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 1.173
10 : USD 0.9775
100 : USD 0.7831
500 : USD 0.6831
1000 : USD 0.5715
3000 : USD 0.5451
6000 : USD 0.5451
9000 : USD 0.5244
24000 : USD 0.5232

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SIRA01DP-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIRA01DP-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The SIRA01DP-T1-GE3 is an n-channel MOSFET manufactured by Vishay. It has a pinch-off voltage of 150V and is rated for 16.1nC of gate-source charge (Qg) and features a Vds of 16.1nC (typical). This MOSFET is capable of delivering currents up to 21.9A, making it well-suited for high-current applications. Its TO-312AA package makes it suitable for surface-mount designs and the low propagation delay and fast switching time characteristics make it an excellent choice for power management and switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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