DMN601WKQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Features Mechanical Data
Low On-Resistance: R Case: SOT323
DS(ON)
Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound.
Low Input Capacitance UL Flammability Classification Rating 94V-0
Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020
Low Input/Output Leakage Terminals: Finish Matte Tin Annealed over Alloy 42
ESD Protected Gate Leadframe. Solderable per MIL-STD-202, Method 208
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminal Connections: See Diagram
Halogen and Antimony Free. Green Device (Note 3) Weight: 0.006 grams (Approximate)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
SOT323
D r a in
D
G a te
G S
G a te
P ro te c tio n
S o u r c e
ESD PROTECTED D io d e
Top View
E Q U IV A L E N T C IR C U I T
Top View
Pin Out Configuration
Ordering Information (Note 5)
Part Number Case Packaging
DMN601WKQ-7 SOT323 3,000/Tape & Reel
DMN601WKQ-13 SOT323 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN601WKQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage 20 V
V
GSS
Continuous Pulsed 300
Drain Current (Note 6) I mA
D
(Note 7) 800
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) 200 mW
P
D
Thermal Resistance, Junction to Ambient 625 C/W
R
JA
Operating and Storage Temperature Range T T -65 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 60 V
BV V = 0V I = 10A
DSS GS , D
Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V
DSS DS GS
Gate-Source Leakage 10 A
IGSS VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1.0 1.6 2.5 V
V V = 10V, I = 1mA
GS(TH) DS D
V 10V, I = 0.5A
GS = D
2.0
Static Drain-Source On-Resistance R
DS(ON)
3.0
V = 4.5V, I = 0.2A
GS D
Forward Transfer Admittance 80 ms
|Y | V = 10V, I = 0.2A
FS DS D
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 50 pF
C
ISS
Output Capacitance C 25 pF V = 25V, V = 0V, f = 1.0MHz
OSS DS GS
Reverse Transfer Capacitance 5.0 pF
CRSS
Notes: 6. Device mounted on FR-4 PCB.
7. Pulse width 10S, Duty Cycle 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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DMN601WKQ January 2016
Diodes Incorporated
www.diodes.com
Document number: DS38408 Rev. 1 - 2