X-On Electronics has gained recognition as a prominent supplier of BVSS123LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. BVSS123LT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BVSS123LT1G ON Semiconductor

Name: BVSS123LT1G
Brand: ON Semiconductor
SKU: BVSS123LT1G_ON Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

BVSS123LT1G electronic component of ON Semiconductor

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See Product Specifications

Part No.	BVSS123LT1G
Manufacturer:	ON Semiconductor
Category:	MOSFETs
Description:	MOSFET NFET 100V 170MA 6OH
Datasheet:	BVSS123LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1528 ea
Line Total: USD 0.76

Availability - 548
Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ: 5 Multiples: 5
Pack Size: 5

BVSS123LT1G More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

548

Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ : 5
Multiples : 5

5 : USD 0.1528
50 : USD 0.1216
150 : USD 0.1061
500 : USD 0.0729
3000 : USD 0.0593
6000 : USD 0.0556

1837

Ship by Wed. 05 Feb to Fri. 07 Feb

MOQ : 5
Multiples : 5

5 : USD 0.2688
25 : USD 0.1442
100 : USD 0.1274
160 : USD 0.1106
435 : USD 0.105

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

170 mA 170 mA

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

6 Ohms 6 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1.6 V 1.6 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

225 mW 225 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Channel Mode

Enhancement Enhancement

Qualification

Aec - Q101 Aec - Q101

Configuration

Single Single

Series

Bss123l Bss123l

Transistor Type

1 N - Channel 1 N - Channel

Brand

On Semiconductor On Semiconductor

Factory Pack Quantity :

3000 3000

Forward Transconductance - Min

80 S 80 S

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-Off Delay Time

40 ns 40 ns

Typical Turn-On Delay Time

20 ns 20 ns

Notes:- Show Stocked Products With Similar Attributes.

BVSS123LT1G Alternative Parts

We are delighted to provide the BVSS123LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BVSS123LT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The BVSS123LT1G with MOSFET NFET 100V 170MA 6OH is a third-generation MOSFET transistor manufactured by ON Semiconductor. This device offers excellent current and power handling capabilities for such a small package size (SOT-23 surface mount). With a voltage rating of 100V and a drain current of 170mA, it is suitable for use in high current switching applications. It features impressive on-state characteristics with high speed switching speeds, low switching noise and excellent thermal stability. The NFET (Complementary MOSFET) technology provides both N-channel enhancement and P-channel depletion devices in a single package for efficient power transfer and control.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
548 Ship by Fri. 14 Feb to Wed. 19 Feb MOQ : 5 Multiples : 5	5 : USD 0.1528 50 : USD 0.1216 150 : USD 0.1061 500 : USD 0.0729 3000 : USD 0.0593 6000 : USD 0.0556

1837 Ship by Wed. 05 Feb to Fri. 07 Feb MOQ : 5 Multiples : 5	5 : USD 0.2688 25 : USD 0.1442 100 : USD 0.1274 160 : USD 0.1106 435 : USD 0.105

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