ZXMP10A17GQ
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Fast Switching Speed
I
D
BV R max
DSS DS(ON) Low Input Capacitance
T = +25C
A
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
350m @ V = -10V -2.4A
GS
-100V
Halogen and Antimony Free. Green Device (Note 3)
450m @ V = -6V -2.1A
GS
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Description and Applications
Case: SOT223
This MOSFET has been designed to minimize the on-state resistance
Case Material: Molded Plastic, Green Molding Compound. UL
and yet maintain superior switching performance, making it ideal for
Flammability Classification Rating 94V-0
high efficiency power management applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Motor Control
Solderable per MIL-STD-202, Method 208
DC-DC Converters
Weight: 0.112 grams (Approximate)
Power Management Functions
Relay and Solenoid Driving
SOT223
D
G
S
Pin Out - Top View Equivalent Circuit
Top View
Ordering Information (Note 5)
Part Number Case Packaging
ZXMP10A17GQTA SOT223 1,000/Tape & Reel
ZXMP10A17GQTC SOT223 4,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
ZXMP10A17GQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V -100 V
DSS
Gate-Source Voltage V 20 V
GS
(Note 7) -2.4
Continuous Drain Current -1.9 A
V = -10V T = +70C (Note 7) I
GS A D
(Note 6) -1.7
Pulsed Drain Current (Note 8) -9.4 A
V = -10V I
GS DM
Continuous Source Current (Body Diode) (Note 7) -4.5 A
I
S
Pulsed Source Current (Body Diode) (Note 8) I -9.4 A
SM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
2.0
(Note 6)
16
Power Dissipation W
P
D
Linear Derating Factor 3.9 mW/C
(Note 7)
31
(Note 6) 62.5
Thermal Resistance, Junction to Ambient R
JA
(Note 7) 32.0 C/W
Thermal Resistance, Junction to Case (Note 6) 7.7
R
JC
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics (@TA = +25C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV -100 V I = -250A, V = 0V
DSS D GS
Zero Gate Voltage Drain Current -0.5 A
I V = -100V, V = 0V
DSS DS GS
Gate-Source Leakage nA
I 100 V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS
Gate Threshold Voltage -2.0 -4.0 V
V I = -250A, V = V
GS(TH) D DS GS
0.350
V = -10V, I = -1.4A
GS D
Static Drain-Source On-Resistance (Note 9) R
DS(ON)
0.450 V = -6V, I = -1.2A
GS D
Forward Transconductance (Notes 9 & 10) g 2.8 S V = -15V, I = -1.4A
fs DS D
Diode Forward Voltage (Note 9) V -0.85 -0.95 V I = -1.7A, V = 0V
SD S GS
Reverse Recovery Time (Note 10) t 33 ns
RR
I = -1.5A, di/dt = 100A/s
F
Reverse Recovery Charge (Note 10) Q 48 nC
RR
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance C 424 pF
iss
V = -50V, V = 0V
DS GS
Output Capacitance C 36.6 pF
oss
f = 1MHz
Reverse Transfer Capacitance 29.8 pF
C
rss
Total Gate Charge (Note 11) 7.1 nC
Q V = -6.0V
g GS
Total Gate Charge (Note 11) 10.7 nC
Q
g V = -50V
DS
Gate-Source Charge (Note 11) 1.7 nC I = -1.4A
Q V = -10V D
gs GS
Gate-Drain Charge (Note 11) Q 3.8 nC
gd
Turn-On Delay Time (Note 11) t 3.0 ns
D(ON)
Turn-On Rise Time (Note 11) t 3.5 ns
R V = -15V, V = -10V
DD GS
I = -1A, R 6.0
Turn-Off Delay Time (Note 11) t 13.4 ns D G
D(OFF)
Turn-Off Fall Time (Note 11) t 7.2 ns
F
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note 6, except the device is measured at t 10 seconds.
8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature.
9. Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
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ZXMP10A17GQ February 2017
Diodes Incorporated
www.diodes.com
Document number: DS37776 Rev. 2 - 2