NCV8406BDTRKG ON Semiconductor

Self-Protected Low Side Driver with Temperature and Current Limit 65 V, 7.0 A, Single NChannel NCV8406A, NCV8406B www.onsemi.com NCV8406A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, V I TYP ESD and integrated Drain-to-Gate clamping for overvoltage protection. DSS D R TYP (Clamped) (Limited) DS(on) This device offers protection and is suitable for harsh automotive environments. 65 V 210 m 7.0 A Features Drain Short Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Over Voltage Protection Gate Protection Input Integrated Clamp for Inductive Switching ESD Protection ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) Temperature Current Current These Devices are Faster than the Rest of the NCV Devices Limit Limit Sense NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable Source These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM Typical Applications 4 DRAIN Switch a Variety of Resistive, Inductive and Capacitive Loads 1 4 2 Can Replace Electromechanical Relays and Discrete Circuits 3 AYW xxxxx Automotive / Industrial SOT223 CASE 318E 1 23 STYLE 3 GATE SOURCE DRAIN 4 1 2 GATE 1 YWW 2 3 DRAIN NCV 3 DPAK xxxxxG SOURCE CASE 369C A = Assembly Location Y = Year W, WW = Work Week xxxxx = 8406A or 8406B G or = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2020 Rev. 9 NCV8406/DNCV8406A, NCV8406B MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 60 Vdc DSS GatetoSource Voltage V 14 Vdc GS Drain Current Continuous I Internally Limited D Total Power Dissipation SOT223 Version P W D T = 25C (Note 1) 1.25 A T = 25C (Note 2) 1.81 A Total Power Dissipation DPAK Version P W D T = 25C (Note 1) 1.31 A T = 25C (Note 2) 2.31 A Thermal Resistance SOT223 Version C/W JunctiontoSoldering Point R 7.0 JS JunctiontoAmbient (Note 1) R 100 JA JunctiontoAmbient (Note 2) R 69 JA Thermal Resistance DPAK Version C/W JunctiontoSoldering Point R 1.0 JS JunctiontoAmbient (Note 1) R 95 JA JunctiontoAmbient (Note 2) R 54 JA Single Pulse Inductive Load Switching Energy E 110 mJ AS (Starting T = 25C, V = 50 Vdc, V = 5.0 Vdc, J DD GS I = 2.1 Apk, L = 50 mH, R = 25 ) L G Load Dump Voltage (V = 0 and 10 V, R = 2 , R = 7 , t = 400 ms) V 75 V GS I L d LD Operating Junction Temperature Range T 40 to 150 C J Storage Temperature Range T 55 to 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (700 sq/mm) FR4 PCB, 1 oz cu. + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention www.onsemi.com 2