X-On Electronics has gained recognition as a prominent supplier of NCV8440ASTT3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NCV8440ASTT3G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NCV8440ASTT3G ON Semiconductor

NCV8440ASTT3G electronic component of ON Semiconductor
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Part No.NCV8440ASTT3G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 2.6A, 52V N-CH, CLAM
Datasheet: NCV8440ASTT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.6972 ea
Line Total: USD 2788.8 
Availability - 0
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.6972
8000 : USD 0.6902
12000 : USD 0.6833
20000 : USD 0.6764
24000 : USD 0.6696
40000 : USD 0.663
100000 : USD 0.6564
200000 : USD 0.6497
500000 : USD 0.6432

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 3.2589
10 : USD 1.2243
100 : USD 0.9114
500 : USD 0.7522
1000 : USD 0.5941
2500 : USD 0.5588
4000 : USD 0.5578

   
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We are delighted to provide the NCV8440ASTT3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NCV8440ASTT3G and other electronic components in the MOSFETs category and beyond.

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NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, NChannel, Logic Level, Clamped MOSFET w/ ESD Protection Features www.onsemi.com Diode Clamp Between Gate and Source ESD Protection Human Body Model 5000 V V DSS R TYP I MAX DS(ON) D (Clamped) Active OverVoltage Gate to Drain Clamp Scalable to Lower or Higher R DS(on) 52 V 95 m 10 V 2.6 A Internal Series Gate Resistance Drain (Pins 2, 4) These are PbFree Devices Benefits Overvoltage High Energy Capability for Inductive Loads Gate Protection (Pin 1) Low Switching Noise Generation Applications ESD Protection Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers NCV Prefix for Automotive and Other Applications Requiring Source (Pin 3) Unique Site and Control Change Requirements AECQ100 Qualified and PPAP Capable MARKING DIAGRAM DRAIN 4 SOT223 CASE 318E AYW xxxxx STYLE 3 1 = Gate 12 3 2 = Drain SOURCE GATE 3 = Source DRAIN A = Assembly Location Y = Year W = Work Week xxxxx = V8440 or 8440A = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2018 Rev. 8 NCV8440/DNCV8440, NCV8440A MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 5259 V DSS GatetoSource Voltage Continuous V 15 V GS Drain Current I D Continuous T = 25C 2.6 A A Single Pulse (t = 10 s) (Note 1) I 10 p DM Total Power Dissipation T = 25C (Note 1) P 1.69 W A D Operating and Storage Temperature Range T , T 55 to 150 C J stg Single Pulse DraintoSource Avalanche Energy E 110 mJ AS (V = 50 V, I = 1.17 A, V = 10 V, L = 160 mH, R = 25 ) DD D(pk) GS G Load Dump Voltage (V = 0 and 10 V, R = 2.0 , R = 9.0 , td = 400 ms) V 60 V GS I L LD Thermal Resistance, C/W JunctiontoAmbient (Note 1) R 74 JA JunctiontoAmbient (Note 2) R 169 JA Maximum Lead Temperature for Soldering T 260 C L Purposes, 1/8 from Case for 10 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. When surface mounted to a FR4 board using 1 pad size, (Cu area 1.127 in ). 2 2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in ). + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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