NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, NChannel, Logic Level, Clamped MOSFET w/ ESD Protection Features www.onsemi.com Diode Clamp Between Gate and Source ESD Protection Human Body Model 5000 V V DSS R TYP I MAX DS(ON) D (Clamped) Active OverVoltage Gate to Drain Clamp Scalable to Lower or Higher R DS(on) 52 V 95 m 10 V 2.6 A Internal Series Gate Resistance Drain (Pins 2, 4) These are PbFree Devices Benefits Overvoltage High Energy Capability for Inductive Loads Gate Protection (Pin 1) Low Switching Noise Generation Applications ESD Protection Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers NCV Prefix for Automotive and Other Applications Requiring Source (Pin 3) Unique Site and Control Change Requirements AECQ100 Qualified and PPAP Capable MARKING DIAGRAM DRAIN 4 SOT223 CASE 318E AYW xxxxx STYLE 3 1 = Gate 12 3 2 = Drain SOURCE GATE 3 = Source DRAIN A = Assembly Location Y = Year W = Work Week xxxxx = V8440 or 8440A = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2018 Rev. 8 NCV8440/DNCV8440, NCV8440A MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 5259 V DSS GatetoSource Voltage Continuous V 15 V GS Drain Current I D Continuous T = 25C 2.6 A A Single Pulse (t = 10 s) (Note 1) I 10 p DM Total Power Dissipation T = 25C (Note 1) P 1.69 W A D Operating and Storage Temperature Range T , T 55 to 150 C J stg Single Pulse DraintoSource Avalanche Energy E 110 mJ AS (V = 50 V, I = 1.17 A, V = 10 V, L = 160 mH, R = 25 ) DD D(pk) GS G Load Dump Voltage (V = 0 and 10 V, R = 2.0 , R = 9.0 , td = 400 ms) V 60 V GS I L LD Thermal Resistance, C/W JunctiontoAmbient (Note 1) R 74 JA JunctiontoAmbient (Note 2) R 169 JA Maximum Lead Temperature for Soldering T 260 C L Purposes, 1/8 from Case for 10 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. When surface mounted to a FR4 board using 1 pad size, (Cu area 1.127 in ). 2 2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in ). + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention www.onsemi.com 2