X-On Electronics has gained recognition as a prominent supplier of NCP45525IMNTWG-L Power Switch ICs - Power Distribution across the USA, India, Europe, Australia, and various other global locations. NCP45525IMNTWG-L Power Switch ICs - Power Distribution are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Power Switch ICs - Power Distribution, ensuring timely deliveries around the world.

NCP45525IMNTWG-L ON Semiconductor

NCP45525IMNTWG-L electronic component of ON Semiconductor
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Part No.NCP45525IMNTWG-L
Manufacturer: ON Semiconductor
Category: Power Switch ICs - Power Distribution
Description: Power Switch ICs - Power Distribution NCP45525IMNTWG-L
Datasheet: NCP45525IMNTWG-L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.592 ea
Line Total: USD 1776 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.592

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.1175
10 : USD 1.551
25 : USD 1.4098
100 : USD 1.1555
250 : USD 1.0804
500 : USD 0.9539
1000 : USD 0.7537
3000 : USD 0.7339

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5528
5 : USD 1.3972
19 : USD 1.0181
52 : USD 0.9618

   
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We are delighted to provide the NCP45525IMNTWG-L from our Power Switch ICs - Power Distribution category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NCP45525IMNTWG-L and other electronic components in the Power Switch ICs - Power Distribution category and beyond.

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ecoSWITCH Advanced Load Management Controlled Load Switch with Low R ON NCP45524, NCP45525 The NCP4552x series of load switches provide a component and area-reducing solution for efficient power domain switching with www.onsemi.com inrush current limit via soft start. These devices are designed to integrate control and driver functionality with a high performance low onresistance power MOSFET in a single package. This cost effective R TYP V V I * ON CC IN MAX DC solution is ideal for power management and hot-swap applications 18.0 m 3.3 V 1.8 V requiring low power consumption in a small footprint. 18.8 m 3.3 V 5.0 V 6 A Features 21.9 m 3.3 V 12 V Advanced Controller with Charge Pump *I is defined as the maximum steady state MAX DC Integrated N-Channel MOSFET with Low R ON current the load switch can pass at room ambient temperature without entering thermal lockout. Input Voltage Range 0.5 V to 13.5 V Soft-Start via Controlled Slew Rate Adjustable Slew Rate Control (NCP45525) Power Good Signal (NCP45524) 1 Extremely Low Standby Current DFN8, 2x2 Load Bleed (Quick Discharge) CASE 506CC This is a PbFree Device Typical Applications MARKING DIAGRAM Portable Electronics and Systems 1 XX M Notebook and Tablet Computers Telecom, Networking, Medical, and Industrial Equipment XX = 4H for NCP45524H SetTop Boxes, Servers, and Gateways = 4L for NCP45524L Hot Swap Devices and Peripheral Ports = 5H for NCP45525H = 5L for NCP45525L V EN V M = Date Code CC PG* IN = PbFree Package (Note: Microdot may be in either location) Bandgap Control & PIN CONFIGURATION Logic Biases V 1 8 V IN OUT 2 EN 7 V OUT Delay and Charge Slew Rate 9: V Pump IN Control 3 V 6 PG or SR CC GND 4 5 BLEED SR* GND BLEED V OUT (Top View) Figure 1. Block Diagram (*Note: either PG or SR available for each part) ORDERING INFORMATION See detailed ordering and shipping information on page 14 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2020 Rev. 6 NCP45524/DNCP45524, NCP45525 Table 1. PIN DESCRIPTION Pin Name Function 1, 9 V Drain of MOSFET (0.5 V 13.5 V), Pin 1 must be connected to Pin 9 IN 2 EN NCP45524H & NCP45525H Activehigh digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP45524L & NCP45525L Activelow digital input used to turn on the MOSFET, pin has an internal pull up resistor to V CC 3 V Supply voltage to controller (3.0 V 5.5 V) CC 4 GND Controller ground 5 BLEED Load bleed connection must be tied to V either directly or through a resistor 100 M . OUT 6 PG NCP45524 Activehigh, opendrain output that indicates when the gate of the MOSFET is fully charged, external pull up resistor 1 k to an external voltage source required tie to GND if not used SR NCP45525 Slew rate adjustment float if not used 7, 8 V Source of MOSFET connected to load OUT Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range V 0.3 to 6 V CC Input Voltage Range V 0.3 to 18 V IN Output Voltage Range V 0.3 to 18 V OUT EN Digital Input Range V 0.3 to (V + 0.3) V EN CC PG Output Voltage Range (Note 1) V 0.3 to 6 V PG Thermal Resistance, JunctiontoAmbient, Steady State (Note 2) 40.0 C/W R JA Thermal Resistance, JunctiontoAmbient, Steady State (Note 3) R 72.7 C/W JA Thermal Resistance, JunctiontoCase (V Paddle) R 5.3 C/W IN JC Continuous MOSFET Current T = 25C I 6.0 A A MAX Transient MOSFET Current (for up to 500 s) I 24 A MAX TRANS Total Power Dissipation T = 25C (Notes 2 and 4) P 2.50 W A D Derate above T = 25C 24.9 mW/C A Total Power Dissipation T = 25C (Notes 3 and 4) P 1.37 W A D Derate above T = 25C 13.8 mW/C A Storage Temperature Range T 40 to 150 C STG Lead Temperature, Soldering (10 sec.) T 260 C SLD ESD Capability, Human Body Model (Notes 5 and 6) ESD 3.0 kV HBM ESD Capability, Machine Model (Note 5) ESD 200 V MM ESD Capability, Charged Device Model (Note 5) ESD 1.0 kV CDM Latchup Current Immunity (Notes 5 and 6) LU 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. NCP45524 only. PG is an opendrain output that requires an external pull up resistor 1 k to an external voltage source. 2. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 3. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 4. Specified for derating purposes only, ensure that I is never exceeded. MAX 5. Tested by the following methods T = 25C: A ESD Human Body Model tested per JESD22A114 ESD Machine Model tested per JESD22A115 ESD Charged Device Model tested per JESD22C101 Latchup Current tested per JESD78 6. Rating is for all pins except for V and V which are tied to the internal MOSFETs Drain and Source. Typical MOSFET ESD performance IN OUT for V and V should be expected and these devices should be treated as ESD sensitive. IN OUT www.onsemi.com 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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