ecoSWITCH Advanced Load Management Controlled Load Switch with Low R ON NCP45541 The NCP45541 load switch provides a component and area- reducing solution for efficient power domain switching with inrush www.onsemi.com current limit via softstart. In addition to integrated control functionality with ultra low onresistance, this device offers system R TYP V V I * monitoring via power good signaling. This cost effective solution is ON CC IN MAX DC ideal for power management and hot-swap applications requiring low 7.7 m 3.3 V 1.8 V power consumption in a small footprint. 3.3 V 5.0 V 14 A 8.0 m Features 9.2 m 3.3 V 12 V Advanced Controller with Charge Pump *I is defined as the maximum steady state MAX DC current the load switch can pass at room ambient Integrated N-Channel MOSFET with Low R ON temperature without entering thermal lockout. Input Voltage Range 0.5 V to 13.5 V Soft-Start via Controlled Slew Rate Adjustable Slew Rate Control Power Good Signal 1 Extremely Low Standby Current DFN12, 3x3 Load Bleed (Quick Discharge) CASE 506CD This is a PbFree Device MARKING DIAGRAM Typical Applications NCP45 Portable Electronics and Systems 541x Notebook and Tablet Computers ALYW Telecom, Networking, Medical, and Industrial Equipment SetTop Boxes, Servers, and Gateways x = H for NCP45541H = L for NCP45541L HotSwap Devices and Peripheral Ports A = Assembly Location L = Wafer Lot V EN V CC PG Y = Year IN W = Work Week = PbFree Package (Note: Microdot may be in either location) Bandgap Control & Logic PIN CONFIGURATION Biases V 1 12 V IN OUT 2 V EN 11 OUT Delay and Charge V V 3 10 OUT CC Slew Rate Pump 13: V IN Control V GND 4 9 OUT SR 5 8 NC SR GND BLEED V OUT PG 6 7 BLEED Figure 1. Block Diagram (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 12 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2020 Rev. 7 NCP45541/DNCP45541 Table 1. PIN DESCRIPTION Pin Name Function 1, 13 V Drain of MOSFET (0.5 V 13.5 V), Pin 1 must be connected to Pin 13 IN 2 EN NCP45541H Activehigh digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP45541L Activelow digital input used to turn on the MOSFET, pin has an internal pull up resistor to V CC 3 V Supply voltage to controller (3.0 V 5.5 V) CC 4 GND Controller ground 5 SR Slew rate adjustment float if not used 6 PG Activehigh, opendrain output that indicates when the gate of the MOSFET is fully driven, external pull up resistor 1 k to an external voltage source required tie to GND if not used. 7 BLEED Load bleed connection, must be tied to V either directly or through a resistor OUT 100 M 8 NC No connect, internally floating but pin may be tied to V OUT 912 V Source of MOSFET connected to load OUT Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range V 0.3 to 6 V CC Input Voltage Range V 0.3 to 18 V IN Output Voltage Range V 0.3 to 18 V OUT EN Digital Input Range V 0.3 to (V + 0.3) V EN CC PG Output Voltage Range (Note 1) V 0.3 to 6 V PG Thermal Resistance, JunctiontoAmbient, Steady State (Note 2) R 30.9 C/W JA Thermal Resistance, JunctiontoAmbient, Steady State (Note 3) 51.3 C/W R JA Thermal Resistance, JunctiontoCase (V Paddle) R 3.5 C/W IN JC Continuous MOSFET Current T = 25C (Note 2) I 14 A A MAX Continuous MOSFET Current T = 25C (Note 3) I 15.5 A A MAX Transient MOSFET Current (for up to 500 s) I 24 A MAX TRANS Total Power Dissipation T = 25C (Note 2) P 3.24 W A D Derate above T = 25C 32.4 mW/C A Total Power Dissipation T = 25C (Note 3) P 1.95 W A D Derate above T = 25C 19.5 mW/C A Storage Temperature Range T 40 to 150 C STG Lead Temperature, Soldering (10 sec.) T 260 C SLD ESD Capability, Human Body Model (Notes 4 and 5) ESD 3.0 kV HBM ESD Capability, Charged Device Model (Note 4) ESD 1.0 kV CDM Latchup Current Immunity (Notes 4 and 5) LU 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. PG is an opendrain output that requires an external pull up resistor 1 k to an external voltage source. 2. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 3. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 4. Tested by the following methods T = 25C: A ESD Human Body Model tested per JESD22A114 ESD Charged Device Model per ESD STM5.3.1 Latchup Current tested per JESD78 5. Rating is for all pins except for V and V which are tied to the internal MOSFETs Drain and Source. Typical MOSFET ESD performance IN OUT for V and V should be expected and these devices should be treated as ESD sensitive. IN OUT www.onsemi.com 2