X-On Electronics has gained recognition as a prominent supplier of NCV8401BDTRKG Gate Drivers across the USA, India, Europe, Australia, and various other global locations. NCV8401BDTRKG Gate Drivers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Gate Drivers, ensuring timely deliveries around the world.

NCV8401BDTRKG ON Semiconductor

NCV8401BDTRKG electronic component of ON Semiconductor
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Part No.NCV8401BDTRKG
Manufacturer: ON Semiconductor
Category: Gate Drivers
Description: Gate Drivers SELF-PROTECTED FET
Datasheet: NCV8401BDTRKG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8201 ea
Line Total: USD 1.82 
Availability - 2956
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2956
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.8201
10 : USD 1.5233
30 : USD 1.3622
100 : USD 1.1776
500 : USD 1.0958
1000 : USD 1.0583

   
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Pd - Power Dissipation
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Rds On - Drain-Source Resistance
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We are delighted to provide the NCV8401BDTRKG from our Gate Drivers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NCV8401BDTRKG and other electronic components in the Gate Drivers category and beyond.

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NCV8401A, NCV8401B Self-Protected Low Side Driver with Temperature and Current Limit NCV8401A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, www.onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive V I MAX DSS D (Clamped) R TYP (Limited) environments. DS(ON) 42 V 23 m 10 V 33 A* Features *Max current may be limited below this value Short Circuit Protection depending on input conditions. Thermal Shutdown with Automatic Restart Over Voltage Protection Drain Integrated Clamp for Inductive Switching Overvoltage ESD Protection Gate Protection dV/dt Robustness Input Analog Drive Capability (Logic Level Input) ESD Protection NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Temperature Current Current Qualified and PPAP Capable Limit Limit Sense These Devices are PbFree and are RoHS Compliant Typical Applications Source Switch a Variety of Resistive, Inductive and Capacitive Loads Can Replace Electromechanical Relays and Discrete Circuits MARKING Automotive / Industrial DIAGRAM 1 YWW DPAK NCV 2 CASE 369C xxxxxG STYLE 2 3 Y = Year WW = Work Week 1 = Gate xxxxx = 8401A or 8401B 2 = Drain G = PbFree Package 3 = Source ORDERING INFORMATION Device Package Shipping NCV8401ADTRKG DPAK 2500/Tape & Reel (PbFree) NCV8401BDTRKG DPAK 2500/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2017 Rev. 13 NCV8401/DNCV8401A, NCV8401B MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 42 V DSS DraintoGate Voltage Internally Clamped (R = 1.0 M ) V 42 V DGR GS GatetoSource Voltage V 14 V GS Drain Current Continuous I Internally Limited D Total Power Dissipation P W D T = 25C (Note 1) 1.1 A T = 25C (Note 2) 2.0 A Thermal Resistance, JunctiontoCase R 1.6 C/W JC JunctiontoAmbient (Note 1) 110 R JA JunctiontoAmbient (Note 2) 60 R JA Single Pulse DraintoSource Avalanche Energy E 800 mJ AS (V = 25 Vdc, V = 5.0 Vdc, I = 3.65 Apk, L = 120 mH, R = 25 , T = 150C) (Note 3) DD GS L G Jstart Load Dump Voltage (V = 0 and 10 V, R = 2.0 , R = 3.0 , t = 400 ms) V 65 V GS I L d LD Operating Junction Temperature T 40 to 150 C J Storage Temperature T 55 to 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Minimum FR4 PCB, steady state. 2. Mounted onto a 2 square FR4 board (1 square, 2 oz. Cu 0.06 thick singlesided, t = steady state). 3. Not subject to production testing. + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention www.onsemi.com 2

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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