NCV8403A, NCV8403B Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single NChannel, SOT223 www.onsemi.com NCV8403A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, V I MAX DSS D R TYP DS(on) (Clamped) (Limited) ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive 42 V 53 m 10 V 15 A environments. Drain Features Short Circuit Protection Overvoltage Thermal Shutdown with Automatic Restart Gate Protection Input Over Voltage Protection Integrated Clamp for Inductive Switching ESD Protection ESD Protection dV/dt Robustness Temperature Current Current Analog Drive Capability (Logic Level Input) Limit Limit Sense NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable Source These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM Typical Applications 4 DRAIN Switch a Variety of Resistive, Inductive and Capacitive Loads 1 4 2 Can Replace Electromechanical Relays and Discrete Circuits 3 AYW Vxxxxx Automotive / Industrial SOT223 CASE 318E 1 23 STYLE 3 GATE SOURCE DRAIN 4 1 GATE YWW 2 1 2 DRAIN NCV 3 3 xxxxxG DPAK SOURCE CASE 369C A = Assembly Location Y = Year W, WW = Work Week xxxxx = 8403A or 8403B G or = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2019 Rev. 13 NCV8403/DNCV8403A, NCV8403B MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 42 Vdc DSS GatetoSource Voltage V 14 Vdc GS Drain Current Continuous I Internally Limited D Total Power Dissipation SOT223 Version P W D T = 25C (Note 1) 1.13 A T = 25C (Note 2) 1.56 A Total Power Dissipation DPAK Version T = 25C (Note 1) 1.32 A T = 25C (Note 2) 2.5 A Thermal Resistance SOT223 Version C/W JunctiontoSoldering Point R 12 JS JunctiontoAmbient (Note 1) R 110 JA JunctiontoAmbient (Note 2) R 80 JA Thermal Resistance DPAK Version JunctiontoSoldering Point R 2.5 JS JunctiontoAmbient (Note 1) R 95 JA JunctiontoAmbient (Note 2) R 50 JA Single Pulse Inductive Load Switching Energy E 470 mJ AS (V = 25 Vdc, V = 5.0 V, I = 2.8 A, L = 120 mH, R = 25 ) DD GS L G Load Dump Voltage (V = 0 and 10 V, R = 2.0 , R = 4.5 , t = 400 ms) V 55 V GS I L d LD Operating Junction Temperature T 40 to 150 C J Storage Temperature T 55 to 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted onto minimum pad size (0.412 square) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (1.127 square) FR4 PCB, 1 oz cu. + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention www.onsemi.com 2