Dual Self-Protected Low-Side Driver with Temperature and Current Limit NCV8402D, NCV8402AD www.onsemi.com NCV8402D/AD is a dual protected LowSide Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V (BR)DSS integrated DraintoGate clamping for overvoltage protection. This R TYP I MAX (Clamped) DS(ON) D device offers protection and is suitable for harsh automotive 42 V 165 m 10 V 2.0 A* environments. *Max current limit value is dependent on input condition. Features ShortCircuit Protection Drain Thermal Shutdown with Automatic Restart Overvoltage Protection Overvoltage Gate Protection Integrated Clamp for Inductive Switching Input ESD Protection dV/dt Robustness ESD Protection Analog Drive Capability (Logic Level Input) Temperature Current Current NCV Prefix for Automotive and Other Applications Requiring Limit Limit Sense Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Source Compliant MARKING DIAGRAM Typical Applications 8 Switch a Variety of Resistive, Inductive and Capacitive Loads SO8 xxxxxx 8 Can Replace Electromechanical Relays and Discrete Circuits CASE 751 ALYW STYLE 11 Automotive / Industrial 1 1 xxxxxx = V8402D or 8402AD A = Assembly Location L = Wafer Lot Y = Year W = Work Week = PbFree Package PIN ASSIGNMENT 1 8 Source 1 Drain 1 Gate 1 Drain 1 Source 2 Drain 2 Gate 2 Drain 2 ORDERING INFORMATION Device Package Shipping NCV8402DDR2G SOIC8 2500/Tape & Reel (PbFree) NCV8402ADDR2G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2019 Rev. 6 NCV8402D/DNCV8402D, NCV8402AD MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 42 V DSS DraintoGate Voltage Internally Clamped (R = 1.0 M ) V 42 V G DGR GatetoSource Voltage V 14 V GS Continuous Drain Current I Internally Limited D Total Power Dissipation T = 25C (Note 1) P 0.8 W A D T = 25C (Note 2) 1.62 A Maximum Continuous Drain, both channels on T = 25C (Note 1) I 1.87 A A D T = 25C (Note 2) 2.65 A Thermal Resistance JunctiontoAmbient Steady State (Note 1) R 157 C/W JA JunctiontoAmbient Steady State (Note 2) R 77 JA Single Pulse DraintoSource Avalanche Energy E 150 mJ AS (V = 32 V, V = 5.0 V, I = 1.0 A, L = 300 mH, R = 25 ) DD G PK G(ext) Load Dump Voltage (V = 0 and 10 V, R = 2.0 , R = 9.0 , t = 400 ms) V 55 V GS I L d LD Operating Junction and Storage Temperature T , T 55 to 150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted onto min pad FR4 PCB, (Cu area = 40 sq. mm, 1 oz.). 2. Surfacemounted onto 1 sq. FR4 board (Cu area = 625 sq. mm, 2 oz.). + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention www.onsemi.com 2