DATA SHEET www.onsemi.com MARKING Single 6 A High-Speed, DIAGRAM Low-Side SiC MOSFET 24 1 ZXYTT Driver P51705 QFN24 4x4 MPX MN SUFFIX CASE 485L NCP51705 Z = Plant Code The NCP51705 driver is designed to primarily drive SiC MOSFET X= 1Digit Year Code transistors. To achieve the lowest possible conduction losses, the Y= 1Digit Week Code driver is capable to deliver the maximum allowable gate voltage to the TT = 2Digit Die Run Code MP = Package Type (QFN) SiC MOSFET device. By providing high peak current during turnon X = Package Type (Tape & Reel) and turnoff, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turnoff, the NCP51705 can utilize its onboard charge pump to generate a user selectable PIN CONNECTIONS negative voltage rail. For full compatibility and to minimize the complexity of the bias solution in isolated gate drive applications the NCP51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators. IN+ 1 18 OUTSRC The NCP51705 offers important protection functions such as IN 2 17 OUTSRC undervoltage lockout monitoring for the bias power and thermal XEN 3 16 PGND shutdown based on the junction temperature of the driver circuit. NCP51705 (Top View ) SGND 4 15 PGND Features VEESET 5 14 OUTSNK High Peak Output Current with Split Output Stages to allow VCH 6 13 OUTSNK independent TurnON/TurnOFF Adjustment Source Capability: 6 A Sink Capability: 6 A Extended Positive Voltage Rating for Efficient SiC MOSFET Operation during the Conduction Period Useradjustable Builtin Negative Charge Pump for Fast Turnoff ORDERING INFORMATION and Robust dV/dt Immunity Device Package Shipping Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply Adjustable UnderVoltage Lockout NCP51705MNTXG QFN24 3000 / Tape & Reel (PbFree) Desaturation Function For information on tape and reel specifications, Thermal Shutdown Function (TSD) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Small & Low Parasitic Inductance QFN24 Package Brochure, BRD8011/D. Typical Applications Driving SiC MOSFET Industrial Inverters, Motor Drivers PFC, AC to DC and DC to DC Converters Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2021 Rev. 4 NCP51705/D C+ 7 24 UVSET C 8 23 V5V PGND 9 22 DESAT PGND 10 21 SVDD VEE 11 20 VDD VEE 12 19 VDDNCP51705 20V IN+ OUTSRC 1 18 IN OUTSRC 2 17 Controller XEN PGND 3 16 NCP51705 SGND PGND (Top View) 4 15 VEESET OUTSNK 5 14 VCH OUTSNK 6 13 VEESET = SGND OFF VEESET = OPEN 3.4 V VEESET = V5V 5 V VEESET = SVDD 8 V Note: Make single point connection From SGND to PGND on PCB. (a) Low Side Switching Configuration CONTROLLER BIAS(3.3 V or 5 V) ISOLATOR BIAS 20 V BIAS (isolated) PWM HS Digital Controller FAULT HS XEN HS Digital ENABLE Isolators ISOLATOR BIAS 20 V BIAS (isolated) PWM LS FAULT LS XEN LS Isolation Boundary (b) Half Bridge Switching Configuration Figure 1. Typical Application Schematics www.onsemi.com 2 C+ UVSET 7 24 C V5V 8 23 DESAT PGND 9 22 SVDD PGND 10 21 VEE VDD 11 20 VEE VDD 12 19