NCV8408, NCV8408B Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single NChannel, DPAK www.onsemi.com NCV8408/B is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, V I MAX DSS D R TYP DS(on) (Clamped) (Limited) ESD and integrated Drain-to-Gate clamping for overvoltage protection. Thermal protection includes a latch which can be reset by toggling the 42 V 55 m 5 V 10 A input. This device is suitable for harsh automotive environments. Drain (2,4) Features Short Circuit Protection Overvoltage Thermal Shutdown with Latched Reset Gate Protection Input (1) Gate Input Current Flag During Latched Fault Condition Overvoltage Protection ESD Protection Integrated Clamp for Inductive Switching ESD Protection Temperature Current Current dV/dt Robustness Limit Limit Sense Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Source (3) Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4 MARKING Compliant DIAGRAM 2 1 Typical Applications 3 Gate Switch a Variety of Resistive, Inductive and Capacitive Loads YWW DPAK Drain Drain xxxxxG Can Replace Electromechanical Relays and Discrete Circuits CASE 369C Source STYLE 2 Automotive / Industrial Y = Year WW = Work Week xxxxx = V8408 or 8408B G = PbFree Package ORDERING INFORMATION Device Package Shipping NCV8408DTRKG DPAK 2500/Tape & Reel (PbFree) NCV8408BDTRKG DPAK 2500/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2019 Rev. 7 NCV8408/DNCV8408, NCV8408B MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 42 Vdc DSS V 42 V DraintoGate Voltage Internally Clamped (R = 1.0 M ) GS DGR GatetoSource Voltage V 14 Vdc GS Continuous Drain Current I Internally Limited D Gate Input Current (V = 14 V ) I 10 mA GS DC GS Source to Drain Current I 4.0 A SD Total Power Dissipation P W D T = 25C (Note 1) 1.8 A T = 25C (Note 2) 2.3 A Thermal Resistance C/W JunctiontoAmbient Steady State (Note 1) 70 R JA JunctiontoAmbient Steady State (Note 2) 55 R JA JunctiontoTab Steady State (Note 3) 2.1 R JT Single Pulse Inductive Load Switching Energy E 185 mJ AS (V = 20 Vdc, V = 5.0 V, I = 8.0 A) DD GS L Repetitive Pulse Inductive Load Switching Energy E 128 AR (V = 20 Vdc, V = 5.0 V, I = 8.0 A, T = 25C) DD GS L J Repetitive Pulse Inductive Load Switching Energy E 92 AR (V = 20 Vdc, V = 5.0 V, I = 6.8 A, T = 105C) DD GS L J Load Dump Voltage (V = 0 and 10 V, R = 2.0 , R = 4.5 , t = 400 ms, T = 25C) V 63 V GS I L d J LD Operating Junction Temperature T 40 to 150 C J Storage Temperature T 55 to 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted onto minimum pad FR4 PCB (1 oz Cu, 0.06 thick). 2. Surfacemounted onto 2 square FR4 PCB, (1 square, 1 oz Cu, 0.06 thick). 3. Surfacemounted onto minimum pad FR4 PCB (2 oz Cu, 0.06 thick). + I D DRAIN I G VDS GATE + SOURCE VGS I S Figure 1. Voltage and Current Convention www.onsemi.com 2