MGSF1N03L, MVGSF1N03L MOSFET Single, N-Channel, SOT-23 30 V, 2.1 A These miniature surface mount MOSFETs low R assure DS(on) minimal power loss and conserve energy, making these devices ideal www.onsemi.com for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable V R TYP I MAX (BR)DSS DS(on) D and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 80 m 10 V 30 V 2.1 A Features 125 m 4.5 V Low R Provides Higher Efficiency and Extends Battery Life DS(on) Miniature SOT23 Surface Mount Package Saves Board Space NChannel MV Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant G MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS S GatetoSource Voltage V 20 V GS MARKING DIAGRAM/ Continuous Drain Steady T = 25C I 2.1 A A D PIN ASSIGNMENT Current R State JL 3 T = 85C 1.5 A Drain Power Dissipation Steady T = 25C P 0.69 W A D R State JL N3 M 1 Continuous Drain Steady T = 25C I 1.6 A D A SOT23 Current (Note 1) State CASE 318 T = 85C 1.2 A STYLE 21 1 2 Power Dissipation T = 25C P 0.42 W A D Gate Source (Note 1) N3 = Specific Device Code Pulsed Drain Current t =10 s I 6.0 A p DM M = Date Code* ESD Capability C = 100 pF, ESD 125 V = PbFree Package (Note 3) RS = 1500 (Note: Microdot may be in either location) Operating Junction and Storage Temperature T , T 55 to 150 C J STG *Date Code orientation and/or overbar may vary depending upon manufacturing location. Source Current (Body Diode) I 2.1 A S Lead Temperature for Soldering Purposes T 260 C L ORDERING INFORMATION (1/8 from case for 10 sec) Device Package Shipping THERMAL RESISTANCE RATINGS MGSF1N03LT1G SOT23 3000 / Tape & Parameter Symbol Max Unit PbFree Reel JunctiontoFoot Steady State R 180 C/W JL MGSF1N03LT3G SOT23 10000 / Tape & JunctiontoAmbient Steady State (Note 1) R 300 (PbFree) Reel JA JunctiontoAmbient t < 10 s (Note 1) R 250 JA MVGSF1N03LT1G SOT23 3000 / Tape & (PbFree) Reel JunctiontoAmbient Steady State (Note 2) R 400 JA Stresses exceeding those listed in the Maximum Ratings table may damage the For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specification 2 1. Surfacemounted on FR4 board using 650 mm , 1 oz. Cu pad size. Brochure, BRD8011/D. 2 2. Surfacemounted on FR4 board using 50 mm , 1 oz. Cu pad size. 3. ESD Rating Information: HBM Class 0. Semiconductor Components Industries, LLC, 1996 1 Publication Order Number: May, 2019 Rev. 11 MGSF1N03LT1/DMGSF1N03L, MVGSF1N03L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 30 Vdc (BR)DSS (V = 0 Vdc, I = 10 Adc) GS D Zero Gate Voltage Drain Current I Adc DSS (V = 30 Vdc, V = 0 Vdc) 1.0 DS GS (V = 30 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V 1.0 1.7 2.4 Vdc GS(th) (V = V , I = 250 Adc) DS GS D Static DraintoSource OnResistance r DS(on) (V = 10 Vdc, I = 1.2 Adc) 0.08 0.10 GS D (V = 4.5 Vdc, I = 1.0 Adc) 0.125 0.145 GS D DYNAMIC CHARACTERISTICS Input Capacitance (V = 5.0 Vdc) C 140 pF DS iss Output Capacitance (V = 5.0 Vdc) C 100 DS oss Transfer Capacitance (V = 5.0 Vdc) C 40 DG rss SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 2.5 ns d(on) Rise Time t 1.0 r (V = 15 Vdc, I = 1.0 Adc, DD D R = 50 ) L TurnOff Delay Time t 16 d(off) Fall Time t 8.0 f Gate Charge (See Figure 6) Q 6000 pC T SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current I 0.6 A S Pulsed Current I 0.75 SM Forward Voltage (Note 5) V 0.8 V SD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2