MOSFET - SiC Power, Single N-Channel 1200 V, 160 m , 17 A NTHL160N120SC1 Features Typ. R = 160 m DS(on) www.onsemi.com Ultra Low Gate Charge (Q = 34 nC) G(tot) Low Effective Output Capacitance (C = 50 pF) oss V R MAX I MAX (BR)DSS DS(on) D 100% UIL Tested 1200 V 224 m 20 V 17 A These Devices are RoHS Compliant Typical Applications NCHANNEL MOSFET UPS D DC/DC Converter Boost Inverter MAXIMUM RATINGS (T = 25C unless otherwise noted) J G Parameter Symbol Value Unit DraintoSource Voltage V 1200 V DSS GatetoSource Voltage V 15/+25 V GS S Recommended Opera- T < 175C V 5/+20 V C GSop tion Values of Gateto Source Voltage Continuous Drain Steady T = 25C I 17 A C D Current State Power Dissipation P 119 W D G Continuous Drain Steady T = 100C I 12 A D C D S Current State TO2473LD Power Dissipation P 59 W CASE 340CX D Pulsed Drain Current T = 25C I 69 A A DM (Note 2) MARKING DIAGRAM Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 11 A S Single Pulse DraintoSource Avalanche E 128 mJ AS &Z&3&K Energy (I = 23 A, L = 1 mH) (Note 3) L(pk) NTHL160 Stresses exceeding those listed in the Maximum Ratings table may damage the N120SC1 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARATERISTICS Parameter Symbol Value Unit JunctiontoCase (Note 1) R 1.3 C/W JC &Z = Assembly Plant Code &3 = Date Code (Year & Week) JunctiontoAmbient (Note 1) R 40 C/W JA &K = Lot 1. The entire application environment impacts the thermal resistance values shown, NTHL160N120SC1 = Specific Device Code they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. E of 128 mJ is based on starting T = 25C L = 1 mH, I = 16 A, V = AS J AS DD 120 V, V = 18 V. ORDERING INFORMATION GS See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2021 Rev. 2 NTHL160N120SC1/DNTHL160N120SC1 ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise stated) J Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 600 I = 1 mA, referenced to 25 C mV/ C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V =0V, V = 1200 V, T =25 C 100 A DSS GS DS J V =0V, V = 1200 V, T = 175 C 250 GS DS J GatetoSource Leakage Current I V = +25/15 V, V =0V 1 A GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage V V =V , I = 2.5 mA 1.8 3.1 4.3 V GS(th) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R 162 224 m V =20V, I = 12 A, T =25 C DS(on) GS D J V =20V, I = 12 A, T = 175 C 271 377 GS D J Forward Transconductance g V =10V, I =12A 3 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 800 V 665 pF GS DS ISS Output Capacitance C 50 OSS Reverse Transfer Capacitance C 5 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, I =16A 34 nC GS DS D G(tot) Threshold Gate Charge Q 6 G(th) GatetoSource Charge Q 12.5 GS GatetoDrain Charge Q 9.6 GD Gate Resistance R f = 1 MHz 1.4 G SWITCHING CHARACTERISTICS Turn-On Delay Time t V = 5/20 V, V = 800 V, 11 ns d(on) GS DS I = 16 A, R =6 , D G Rise Time t 19 r Inductive Load TurnOff Delay Time t 15 d(off) Fall Time t 8 f Turn-On Switching Loss E 200 J ON Turn-Off Switching Loss E 34 OFF Total Switching Loss E 234 TOT DRAINSOURCE DIODE CHARACTERISTICS Continuous DraintoSource Diode I V = 5V, T =25 C 11 A SD GS J Forward Current Pulsed DraintoSource Diode For- I V = 5V, T =25 C 69 A SDM GS J ward Current (Note 2) Forward Diode Voltage V V = 5V, I = 6 A, T =25 C 4 10 V SD GS SD J Reverse Recovery Time t V = 5/20 V, I =16A, 15 ns RR GS SD dI /dt = 1000 A/ s S Reverse Recovery Charge Q 45 nC RR Reverse Recovery Energy E 3.9 J REC Peak Reverse Recovery Current I 6.2 A RRM Charge Time Ta 7.4 ns Discharge Time Tb 7 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2