STW12N170K5 STMicroelectronics

STW12N170K5 Datasheet N-channel 1700 V, 2.3 typ., 5 A, MDmesh K5 Power MOSFET in a TO247 package Features V R max. I P Order code DS DS(on) D TOT STW12N170K5 1700 V 2.9 5 A 250 W Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 2 1 Ultra-low gate charge 100% avalanche tested TO-247 Zener-protected D(2, TAB) Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a S(3) AM01475V1 dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STW12N170K5 Product summary Order code STW12N170K5 Marking 12N170K5 Package TO-247 Packing Tube DS12847 - Rev 1 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW12N170K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current at T = 25 C 5 A C I D Drain current at T = 100 C 3 A C (1) I Drain current (pulsed) 10 A DM P Total power dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 5 A, di/dt 100 A/s, V V SD DS(peak) (BR)DSS 3. V 1360 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-amb 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Maximum current during repetitive or single pulse avalanche 1.7 A AR (2) E Single pulse avalanche energy 1000 mJ AS 1. Pulse width limited by T Jmax 2. Starting T = 25 C, I = I , V = 50 V J D AR DD DS12847 - Rev 1 page 2/14