DMNH4011SK3Q
Green
40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Rated to +175C Ideal for High Ambient Temperature
Environments
I
D
BV R Max
DSS DS(ON)
100% Unclamped Inductive Switching ensures more reliable
T = +25C
C
and robust end application
40V 50A
10m @ V = 10V
GS
Low On-Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Mechanical Data
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in: Case: TO252
Case Material: Molded Plastic, Green Molding Compound.
DC-DC Converters
UL Flammability Classification Rating 94V-0
Power Management Functions
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
D
TO252
G
D
S
G S
Top View Top View Internal Schematic
Pin Out
Ordering Information (Note 5)
Part Number Case Packaging
DMNH4011SK3Q-13 TO252 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH4011SK3Q
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T = +25C 50
C
Continuous Drain Current (Note 7) I A
D
State 27
T = +100C
C
Maximum Body Diode Forward Current (Note 7) 40 A
I
S
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 120 A
I
DM
Avalanche Current, L=0.1mH 45 A
I
AS
Avalanche Energy, L=0.1mH 100 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 2.6 W
PD
Thermal Resistance, Junction to Ambient (Note 6) 47 C/W
R
JA
Total Power Dissipation (Note 7) P 50 W
D
Thermal Resistance, Junction to Case (Note 7) 3 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 40 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 40V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 2 4 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 8.5 10 m V = 10V, I = 50A
DS(ON) GS D
Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
1,405
Input Capacitance C
iss
247
Output Capacitance C pF V = 20V, V = 0V, f = 1MHz
oss DS GS
108
Reverse Transfer Capacitance C
rss
2.2
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge 25.5
Q
g
Gate-Source Charge 4.6 nC
Q V = 20V, V = 10V , I = 50A
gs DS GS D
Gate-Drain Charge 6.9
Q
gd
Turn-On Delay Time 4.6
t
D(ON)
Turn-On Rise Time 3.7
t V = 20V, V = 10V,
R DD GS
ns
16
Turn-Off Delay Time t I = 50A, R = 3.5
D(OFF) D g
5.1
Turn-Off Fall Time t
F
22.1
Body Diode Reverse Recovery Time t ns
RR
I = 50A, di/dt = 100A/s
F
13.4
Body Diode Reverse Recovery Charge Q nC
RR
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
DMNH4011SK3Q December 2015
Diodes Incorporated
www.diodes.com
Document number: DS38163 Rev. 1 - 2
NEW PRODUCT
ADVANCED INFORMATION