X-On Electronics has gained recognition as a prominent supplier of IGLD60R070D1AUMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IGLD60R070D1AUMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IGLD60R070D1AUMA1 Infineon

IGLD60R070D1AUMA1 electronic component of Infineon
IGLD60R070D1AUMA1 Infineon
IGLD60R070D1AUMA1 MOSFETs
IGLD60R070D1AUMA1  Semiconductors

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See Product Specifications
Part No. IGLD60R070D1AUMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 600V CoolGaN Power Transistor
Datasheet: IGLD60R070D1AUMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 24.4894 ea
Line Total: USD 73.47 
Availability - 2813
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
8
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3
Multiples : 1
3 : USD 22.763

2813
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3
Multiples : 1
3 : USD 24.4894
10 : USD 24.2749
25 : USD 23.1363
50 : USD 22.93
100 : USD 22.7237
250 : USD 22.5175
500 : USD 22.3125
1000 : USD 22.1063

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IGLD60R070D1AUMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGLD60R070D1AUMA1 and other electronic components in the MOSFETs category and beyond.

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IGLD60R070D1 IGLD60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge G SK Capable of reverse conduction S S Low gate charge, low output charge D D Superior commutation ruggedness D D Qualified for industrial applications according to JEDEC 1 S S Standards (JESD47 and JESD22) SK G 8 Benefits Gate 8 Improves system efficiency Drain 1,2,3,4 Improves power density Kelvin Source 7 Enables higher operating frequency Source 5,6 System cost reduction savings Reduces EMI Applications Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review CoolGaN reliability white paper and contact Infineon regional support Table 1 Key Performance Parameters at T = 25 C j Parameter Value Unit V 600 V DS,max R 70 m DS(on),max QG,typ 5.8 nC I 60 A D,pulse Q 400 V 41 nC oss Q 0 nC rr Table 2 Ordering Information Type / Ordering Code Package Marking Related links IGLD60R070D1 PG-LSON-8-1 60R070D1 see Appendix A Final Data Sheet Please read the Important Notice and Warnings at the end of this document Rev. 2.12 www.infineon.com 2021-04-27 IGLD60R070D1 600V CoolGaN enhancement-mode Power Transistor Table of Contents Features .................................................................................................................................. 1 Benefits .................................................................................................................................. 1 Applications ................................................................................................................................... 1 Table of Contents ........................................................................................................................... 2 1 Maximum ratings ........................................................................................................... 3 2 Thermal characteristics .................................................................................................. 4 3 Electrical characteristics ................................................................................................ 5 4 Electrical characteristics diagrams .................................................................................. 7 5 Test Circuits ................................................................................................................. 13 6 Package Outlines .......................................................................................................... 14 7 Appendix A ................................................................................................................... 15 8 Revision History ........................................................................................................... 16 Final Data Sheet 2 Rev. 2.12 2021-04-27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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