NVATS5A304PLZ Power MOSFET 60 V, 6.5 m, 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features V R (on) Max I DSS DS D Max Low On-Resistance 6.5 m 10 V 60 V 120 A High Current Capability 8.9 m 4.5 V 100% Avalanche Tested AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252) ELECTRICAL CONNECTION P-Channel Pb-Free, Halogen Free and RoHS compliance 2,4 Typical Applications Reverse Battery Protection Load Switch Automotive Front Lighting 1 Automotive Body Controllers 1 : Gate 2 : Drain 3 : Source SPECIFICATIONS 4 : Drain ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 3 Parameter Symbol Value Unit Drain to Source Voltage V 60 V DSS Gate to Source Voltage V 20 V GSS 4 Drain Current (DC) I 120 A D Drain Current (Pulse) I 480 A DP PW 10 s, duty cycle 1% 1 2 Power Dissipation P 108 W ATPAK D 3 Tc = 25C Operating Junction and Tj, Tstg 55 to +175 C Storage Temperature MARKING Avalanche Energy (Single Pulse) (Note 2) E 656 mJ AS Avalanche Current (Note 3) I 75 A AV Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : V = 36 V, L = 100 H, I = 75 A (Fig.1) DD AV 3 : L 100 H, Single pulse ORDERING INFORMATION THERMAL RESISTANCE RATINGS See detailed ordering and shipping Parameter Symbol Value Unit information on page 6 of this data sheet. Junction to Case Steady State (Tc = 25 C) R 1.38 C/W JC C/W Junction to Ambient (Note 4) R 77.2 JA 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : June 2016 - Rev. 0 NVATS5A304PLZ/D NVATS5A304PLZ ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1 mA, V = 0 V V BR DSS D GS 60 I V = 60 V, V = 0 V Zero-Gate Voltage Drain Current DSS 10 A DS GS I Gate to Source Leakage Current V = 16 V, V = 0 V 10 A GSS GS DS V (th) Gate Threshold Voltage V = 10 V, I = 1 mA 1.2 2.6 V GS DS D Forward Transconductance g V = 10 V, I = 50 A 100 S FS DS D R (on)1 I = 50 A, V = 10 V DS 5.0 6.5 m D GS Static Drain to Source On-State Resistance R (on)2 I = 50 A, V = 4.5 V 6.4 8.9 m DS D GS Input Capacitance Ciss 13,000 pF Output Capacitance Coss V = 20 V, f = 1 MHz 1,080 pF DS Reverse Transfer Capacitance Crss 760 pF t (on) Turn-ON Delay Time 80 ns d t Rise Time 650 ns r See Fig.2 Turn-OFF Delay Time t (off) 780 ns d t Fall Time f 460 ns Total Gate Charge Qg 250 nC Gate to Source Charge Qgs V = 36 V, V = 10 V, I = 100 A 55 nC DS GS D Gate to Drain Miller Charge Qgd 50 nC V I = 100 A, V = 0 V Forward Diode Voltage SD 1.0 1.5 V S GS Reverse Recovery Time t See Fig.3 90 ns rr 245 nC Reverse Recovery Charge Q I = 100 A, V = 0 V, di/dt = 100 A/s rr S GS Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit D NVATS5A304PLZ G L S V DD Driver MOSFET www.onsemi.com 2