DMN80H2D0SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R Package DSS DS(ON) High BV Rating for Power Application T = +25C DSS C ITO220AB Low Input/Output Leakage 800V 7A 2.0 V = 10V GS (Type TH) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management Case: ITO220AB (Type TH) applications. Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Applications Solderable per MIL-STD-202, Method 208 Motor Control Terminal Connections: See Diagram Below Backlighting Weight: 1.85 grams (Approximate) DC-DC Converters Power Management Functions ITO220AB (Type TH) Top View Bottom View Top View Pin Out Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN80H2D0SCTI ITO220AB (Type TH) 50 pieces/tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN80H2D0SCTI Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 800 V V DSS Gate-Source Voltage 30 V V GSS Steady T = +25C 7 C Continuous Drain Current (Note 9), V = 10V I A GS D State 4 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 9) I 28 A DM Avalanche Current (Note 6) 2.0 A L = 30mH I AS Avalanche Energy (Note 6) 60 mJ L = 30mH E AS Peak Diode Recovery dv/dt dv/dt 2.8 V/ns Thermal Characteristics Characteristic Symbol Max Unit T = +25C 41 C Power Dissipation (Note 5) P W D 16 T = +100C C Thermal Resistance, Junction to Ambient (Note 6) 49.5 C/W R JA Thermal Resistance, Junction to Case (Note 5) 3 C/W R JC Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 800 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 25 A V = 800V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 2.0 3.3 4.0 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 1.4 2.0 V = 10V, I = 2.5A DS(ON) GS D Diode Forward Voltage V 0.86 1.5 V V = 0V, I = 7.0A SD GS S DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C 1253 iss V = 25V, V = 0V, DS GS 115 Output Capacitance pF Coss f = 1.0MHz 11 Reverse Transfer Capacitance C rss Gate Resistance 1.5 R V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge 35.4 Q g V = 10V, V = 560V, GS DS Gate-Source Charge 5.9 nC Q gs I = 7A D 16.4 Gate-Drain Charge Q gd 20.5 Turn-On Delay Time t ns D(ON) 35.8 Turn-On Rise Time t ns F V = 10V, V = 350V, GS DD 104 Turn-Off Delay Time t ns R = 25, I = 7A D(OFF) G D 42.6 Turn-Off Fall Time t ns F 419 Body Diode Reverse Recovery Time ns t dI/dt = 100A/s, V = 0V, RR GS Body Diode Reverse Recovery Charge 4324 C I = 7A Q F RR Notes: 5. Device mounted on an infinite heatsink. 6. Guaranteed by design. Not subject to production testing. 7. I 4.5A, di/dt 200A/s, V BV , starting T = +25C. SD DD DSS J 8. Short duration pulse test used to minimize self-heating effect. 9. Drain current limited by maximum junction temperature. 2 of 7 April 2017 DMN80H2D0SCTI www.diodes.com Diodes Incorporated Document number: DS39151 Rev. 2 - 2