RF6E065BN Datasheet Nch 30V 6.5A Middle Power MOSFET llOutline SOT-363T V 30V DSS TUMT6 R (Max.) 15.3m DS(on) I 6.5A D P 1W D llInner circuit llFeatures 1) Low on - resistance. 2) Small surface mount package (TUMT6). 3) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TCR Marking AA llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 6.5 A D *1 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *2 P 1 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.001 RF6E065BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 6.5A - 12.9 15.3 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 6.5A - 18.5 22.7 GS D R Gate resistance f = 1MHz, open drain - 3.6 - G Forward Transfer *4 Y V = 5V, I = 6.5A 5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.
