X-On Electronics has gained recognition as a prominent supplier of RFN10NS6SFHTL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN10NS6SFHTL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN10NS6SFHTL ROHM

RFN10NS6SFHTL electronic component of ROHM
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See Product Specifications
Part No.RFN10NS6SFHTL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-263S 10A Io
Datasheet: RFN10NS6SFHTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1508 ea
Line Total: USD 2.15 
Availability - 870
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 RFN10NS6SFHTL More Buying Options & Price Grid(s)

Availability Price Quantity
870
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.1508
10 : USD 1.6058
100 : USD 1.1918
500 : USD 0.9855
1000 : USD 0.8294

970
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 94
Multiples : 1
94 : USD 1.7789
300 : USD 1.4997
1000 : USD 1.1914

970
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 94
Multiples : 1
94 : USD 1.7789
300 : USD 1.4997

924
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 23
Multiples : 1
23 : USD 2.2898
50 : USD 1.9484
100 : USD 1.6237
200 : USD 1.5384
500 : USD 1.3219

Specifications

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Qualification
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN10NS6SFHTL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN10NS6SFHTL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10NS6SFH Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery Applications RFN10 NS6S General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolu e Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=91C 10 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =10A Forward voltage F F 1.25 1.55 V V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 30 50 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A RFN10NS6SFH Data Sheet 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=150 C 1000 Tj=75 C Tj=125 C 100 Tj=75 C Tj=25 C 1 Tj=25 C 10 1 0.1 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 3000 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1400 1000 I =10A F V =600V R 1350 Tj=25 C Tj=25 C 1300 100 1250 AVE:1261mV 1200 10 AVE:30.5nA 1150 1 1100 V DISPERSION MAP I DISPERSION MAP F R 1000 180 f=1MHz f=1MHz V =0V R 175 Tj=25 C 100 170 165 AVE:169pF 10 160 155 1 150 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) R Ct DISPERSION MAP V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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