X-On Electronics has gained recognition as a prominent supplier of SP8K33FRATB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SP8K33FRATB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SP8K33FRATB ROHM

SP8K33FRATB electronic component of ROHM
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See Product Specifications
Part No.SP8K33FRATB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, N-CH, AEC-Q101, 60V, 5A, SOP-8
Datasheet: SP8K33FRATB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0834 ea
Line Total: USD 1.08 
Availability - 1993
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1993
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0834
10 : USD 0.8639
100 : USD 0.7253
500 : USD 0.6329
1000 : USD 0.529
2500 : USD 0.4863

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rds On
Rds On Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SP8K33FRATB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SP8K33FRATB and other electronic components in the MOSFETs category and beyond.

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SP8K33FRA SP8K33 Transistors AEC-Q101 Qualified 4V Drive Nch+Nch MOSFET SP8K33FRA SP8K33 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 z Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). z Application Switching Each lead has same dimensions z Packaging specifications z Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SP8K33FRASP8K33 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage VGSS 20 V Continuous ID 5.0 A Drain current 1 Pulsed I 20 A DP Source current Continuous IS 1.0 A (Body diode) 1 Pulsed ISP 20 A 2 Total power dissipation P 2.0 W/TOTAL D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 Mounted on a ceramic board. 1/4SP8K33FRASP8K33 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AV GS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 60 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =60V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 34 48 ID=5.0A, VGS=10V Static drain-source on-state R 38 54 m I =5.0A, V =4.5V DS (on) D GS resistance 40 56 ID=5.0A, VGS=4.0V Forward transfer admittance Yfs 5.0 SID=5.0A, VDS=10V Input capacitance C 620 pF V =10V iss DS Output capacitance Coss 145 pF VGS=0V Reverse transfer capacitance Crss 70 pF f=1MHz Turn-on delay time t 12 ns I =2.5A, V 30V d (on) D DD Rise time tr 20 ns VGS=10V Turn-off delay time td (off) 40 ns RL=12 Fall time t 20 ns R =10 f G Total gate charge Qg 8.0 12 nC ID=5.0A, VDD 30V Gate-source charge Qgs 2.0 nC VGS=5V Gate-drain charge Q =6, R =10 gd 2.6 nC RL G Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=5.0A, VGS=0V Pulsed 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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