SP8K33FRA SP8K33 Transistors AEC-Q101 Qualified 4V Drive Nch+Nch MOSFET SP8K33FRA SP8K33 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 z Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). z Application Switching Each lead has same dimensions z Packaging specifications z Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SP8K33FRASP8K33 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage VGSS 20 V Continuous ID 5.0 A Drain current 1 Pulsed I 20 A DP Source current Continuous IS 1.0 A (Body diode) 1 Pulsed ISP 20 A 2 Total power dissipation P 2.0 W/TOTAL D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 Mounted on a ceramic board. 1/4SP8K33FRASP8K33 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AV GS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 60 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =60V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 34 48 ID=5.0A, VGS=10V Static drain-source on-state R 38 54 m I =5.0A, V =4.5V DS (on) D GS resistance 40 56 ID=5.0A, VGS=4.0V Forward transfer admittance Yfs 5.0 SID=5.0A, VDS=10V Input capacitance C 620 pF V =10V iss DS Output capacitance Coss 145 pF VGS=0V Reverse transfer capacitance Crss 70 pF f=1MHz Turn-on delay time t 12 ns I =2.5A, V 30V d (on) D DD Rise time tr 20 ns VGS=10V Turn-off delay time td (off) 40 ns RL=12 Fall time t 20 ns R =10 f G Total gate charge Qg 8.0 12 nC ID=5.0A, VDD 30V Gate-source charge Qgs 2.0 nC VGS=5V Gate-drain charge Q =6, R =10 gd 2.6 nC RL G Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=5.0A, VGS=0V Pulsed 2/4