SP8K4FU6TB ROHM

SM6K2 Transistors 4V Drive Nch+Nch MOS FET SM6K2 z Structure z External dimensions (Unit : mm) Silicon N-channel SMT6 2.9 MOSFET transistor 1.1 1.9 0.95 0.95 0.8 ( ) ( ) ( ) 4 5 6 z Features 1) Two RHU002N06 chips in a SMT package. ( ) ( ) ( ) 3 2 1 2) Mounting possible with SMT3 automatic mounting machines. 1pin mark 0.3 0.15 3) Transistor elements are independent, eliminating mutual Each lead has same dimensions interference. 4) Mounting cost and area can be cut in half. Abbreviated symbol : K2 z Packaging specifications z Equivalent circuit (4) (5) (6) Package Taping 1 Code T110 Type Basic ordering unit (pieces) 3000 2 SM6K2 (1) TR1 Drain (2) TR2 Gate 2 (3) TR2 Source (4) TR2 Drain (5) TR1 Gate (6) TR1 Source 1 1 Gate Protection Diode 2 Body Diode (3) (2) (1) A protection diode has been built in between the gate and the source to protect against static electricity z Absolute maximum ratings (Ta=25C) when the product is in use. Use the protection circuit when fixed voltages are exceeded. <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V VGSS 20 V Gate-source voltage Continuous ID 200 mA Drain current 1 IDP 800 mA Pulsed mA Continuous IDR 200 Drain reverse current 1 IDRP 800 mA Pulsed 300 mW / TOTAL 2 PD Total power dissipation 200 mW / ELEMENT Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 With each pin mounted on the recommended lands. z Thermal resistance Parameter Symbol Limits Unit 416.7 C / W / TOTAL Channel to ambient Rth(ch-a) 625 C / W / ELEMENT With each pin mounted on the recommended lands. Rev.B 1/4 1.6 2.8 0.3Min.SM6K2 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Test Conditions IGSS 10 A VGS=20V, VDS=0V Gate leakage current Drain-source breakdown voltage V (BR) DSS 60 V ID=1mA, VGS=0V Drain cutoff current IDSS 1 A VDS=60V, VGS=0V Gate threshold voltage VGS (th) 1 2.5 V VDS=10V, ID=1mA 1.7 2.4 ID=200mA, VGS=10V Drain-source on-state resistance RDS (on) 2.8 4.0 ID=200mA, VGS=4V Forward transfer admittance l Yfs l 0.1 S VDS=10V, ID=200mA Input capacitance Ciss 15 pF VDS=10V Output capacitance Coss 8 pF VGS=0V f=1MHz Reverse transfer capacitance Crss 4 pF Turn-on delay time td (on) 6 ns ID=100mA, VDD 30V Rise time 5 ns tr VGS=10V RL=300 Turn-off delay time 12 ns td (off) RG =10 95 ns Fall time tf 2.2 4.4 nC Total gate charge Qg VDD 30V 0.6 nC VGS=10V Gate-source charge Qgs ID=200mA 0.3 nC Gate-drain charge Qgd Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=200mA, VGS=0V Rev.B 2/4