SP8K31FRA SP8K31 Transistor AEC-Q101 Qualified 4V Drive Nch+Nch MOSFET SP8K31 SP8K31FRA z Dimensions (Unit : mm) z Structure SOP8 Silicon N-channel MOSFET z Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). z Applications Each lead has same dimensions Switching z Equivalent circuit z Packaging dimensions (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SP8K31FRA SP8K31 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage VGSS 20 V Continuous ID 3.5 A Drain current 1 Pulsed I 14 A DP Source current Continuous IS 1.0 A (Body diode) 1 Pulsed ISP 14 A 2 Total power dissipation P 2.0 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 Mounted on a ceramic board. 1/4SP8K31FRA SP8K31 Transistor z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 60 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 60V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 85 120 m ID= 3.5A, VGS= 10V Static drain-source on-state R 100 140 m I = 3.5A, V = 4.5V DS (on) D GS resistance 105 150 m ID= 3.5A, VGS= 4.0V Forward transfer admittance Yfs 2.5 SVDS= 10V, ID= 3.5A Input capacitance C 250 pF V = 10V iss DS Output capacitance Coss 60 pF VGS=0V Reverse transfer capacitance Crss 30 pF f=1MHz Turn-on delay time t 7 ns VDD 30V d (on) ID= 1.8A Rise time tr 14 ns VGS= 10V Turn-off delay time td (off) 25 ns RL= 17 Fall time t 7 ns RG=10 f Total gate charge Qg 3.7 5.2 nC VDD 30V, VGS= 5V Gate-source charge Qgs 1.2 nC ID= 3.5A Gate-drain charge Q 1.2 nC R = 8.6 , R = 10 gd L G Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage VSD 1.2 V IS=3.5A, VGS=0V Pulsed 2/4