SP8K24FRA SP8K24 Transistor AEC-Q101 Qualified 4V Drive Nch+Nch MOSFET SP8K24 SP8K24FRA z Structure z Dimensions (Unit : mm) Silicon N-channel SOP8 5.0 MOSFET 1.75 0.4 ( ) ( ) 8 5 z Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). ( ) ( ) 1 4 0.2 1.27 1pin mark z Applications Each lead has same dimensions Power switching , DC / DC converter , Inverter z Packaging dimensions z Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB 2500 Basic ordering unit (pieces) SP8K24FRASP8K24 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage V 45 V DSS Gate-source voltage V 20 V GSS I Continuous 6.0 A D Drain current Pulsed I 24 A DP *1 Continuous I 1A Source current S (Body diode) Pulsed I 24 A SP *1 2 W / TOTAL P Total power dissipation D *2 1.4 W / ELEMENT o Chanel temperature T 150 ch C o Range of Storage temperature T -55 to +150 stg C *1 PW 10Duty cycle 1% *2 Mounted on a ceramic board Rev.B 1/4 3.9 6.0 0.4Min.SP8K24FRA SP8K24 Transistor z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 45 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 45V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 18 25 m ID= 6.0A, VGS= 10V Static drain-source on-state R 24 34 m I = 6.0A, V = 4.5V DS (on) D GS resistance 26 37 m ID= 6.0A, VGS= 4.0V Forward transfer admittance Yfs 6.0 SVDS= 10V, ID= 6.0A Input capacitance C 1400 pF V = 10V iss DS Output capacitance Coss 310 pF VGS=0V Reverse transfer capacitance Crss 175 pF f=1MHz Turn-on delay time t 19 ns VDD 25V d (on) ID= 3.0A Rise time tr 30 ns VGS= 10V Turn-off delay time td (off) 72 ns RL= 8 Fall time t 27 ns RG=10 f Total gate charge Qg 15.4 21.6 nC VDD 25V, VGS= 5V Gate-source charge Qgs 3.7 nC ID= 6.0A Gate-drain charge Q 6.5 nC R = 4, R = 10 gd L G Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Condition Symbol Min. Typ. Max. Unit Forward voltage I =6.0A/V =0V V * 1.2 V SD S GS * pulsed Rev.B 2/4