X-On Electronics has gained recognition as a prominent supplier of SPB11N60C3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPB11N60C3 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPB11N60C3 Infineon

SPB11N60C3 electronic component of Infineon
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See Product Specifications
Part No.SPB11N60C3
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET COOL MOS N-CH 650V 11A
Datasheet: SPB11N60C3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.3465 ea
Line Total: USD 3.35 
Availability - 1262
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
65
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 64
Multiples : 1
64 : USD 1.9625

5
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 3.039
10 : USD 2.9623
30 : USD 2.9125
100 : USD 2.8628

1262
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 3.3465
10 : USD 2.645
100 : USD 2.0355
500 : USD 1.8745
1000 : USD 1.863

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SPB11N60C3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPB11N60C3 and other electronic components in the MOSFETs category and beyond.

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SPB11N60C3 Cool MOS Power Transistor V T 650 V DS jmax Feature R 0.38 DS(on) New revolutionary high voltage technology I 11 A D Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current I A D T = 25 C 11 C T = 100 C 7 C Pulsed drain current, t limited by T I 33 A p jmax D puls Avalanche energy, single pulse E 340 mJ AS I =5.5A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.6 AR AR jmax I =11A, V =50V D DD Avalanche current, repetitive t limited by T I 11 A AR jmax AR Gate source voltage static V 20 V GS V Gate source voltage AC (f >1Hz) 30 GS Power dissipation, T = 25C P 125 W C tot Operating and storage temperature T , T -55...+150 C j stg 7) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.6 Page 1 2007-12-14SPB11N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 V, I = 11 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1 K/W Thermal resistance, junction - case thJC - - R - - 62 Thermal resistance, junction - ambient, leaded thJA - - SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, reflow soldering, MSL1 T sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 600 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =11A - 700 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =500A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.1 1 j T =150C - - 100 j V =30V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =7A Drain-source on-state resistance R GS D DS(on) T =25C - 0.34 0.38 j T =150C - 0.92 - j R f=1MHz, open drain - 0.86 - Gate input resistance G Rev. 2.6 Page 2 2007-12-14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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