SPB11N60C3 Cool MOS Power Transistor V T 650 V DS jmax Feature R 0.38 DS(on) New revolutionary high voltage technology I 11 A D Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current I A D T = 25 C 11 C T = 100 C 7 C Pulsed drain current, t limited by T I 33 A p jmax D puls Avalanche energy, single pulse E 340 mJ AS I =5.5A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.6 AR AR jmax I =11A, V =50V D DD Avalanche current, repetitive t limited by T I 11 A AR jmax AR Gate source voltage static V 20 V GS V Gate source voltage AC (f >1Hz) 30 GS Power dissipation, T = 25C P 125 W C tot Operating and storage temperature T , T -55...+150 C j stg 7) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.6 Page 1 2007-12-14SPB11N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 V, I = 11 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1 K/W Thermal resistance, junction - case thJC - - R - - 62 Thermal resistance, junction - ambient, leaded thJA - - SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, reflow soldering, MSL1 T sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 600 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =11A - 700 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =500A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.1 1 j T =150C - - 100 j V =30V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =7A Drain-source on-state resistance R GS D DS(on) T =25C - 0.34 0.38 j T =150C - 0.92 - j R f=1MHz, open drain - 0.86 - Gate input resistance G Rev. 2.6 Page 2 2007-12-14