X-On Electronics has gained recognition as a prominent supplier of SPA20N65C3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPA20N65C3 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPA20N65C3 Infineon

SPA20N65C3 electronic component of Infineon
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See Product Specifications
Part No.SPA20N65C3
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 650V 20.7A TO220FP-3 CoolMOS C3
Datasheet: SPA20N65C3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 3.0707 ea
Line Total: USD 27.64 
Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 500
Multiples : 500
500 : USD 5.2253

0
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 6.815
10 : USD 5.9805
30 : USD 5.4836
100 : USD 4.9827
500 : USD 4.3621
1000 : USD 4.2571

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 500
Multiples : 500
500 : USD 2.354

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 9
Multiples : 1
9 : USD 3.0707
10 : USD 2.7319
50 : USD 2.5504
100 : USD 2.5504

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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We are delighted to provide the SPA20N65C3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPA20N65C3 and other electronic components in the MOSFETs category and beyond.

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SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor V 650 V DS Feature R 0.19 DS(on) New revolutionary high voltage technology I 20.7 A D Worldwide best R in TO 220 DS(on) PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconductance Type Package Ordering Code Marking 20N65C3 SPP20N65C3 PG-TO220 Q67040-S4556 20N65C3 SPA20N65C3 PG-TO220FP SP000216362 SPI20N65C3 PG-TO262 Q67040-S4560 20N65C3 Maximum Ratings Parameter Symbol Value Unit SPP I SPA Continuous drain current I A D 1) T = 25 C 20.7 20.7 C 1) T = 100 C 13.1 13.1 C Pulsed drain current, t limited by T I 62.1 62.1 A p jmax D puls Avalanche energy, single pulse E 690 690 mJ AS I =3.5A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 1 1 AR AR jmax I =7A, V =50V D DD Avalanche current, repetitive t limited by T I 7 7 A AR jmax AR Gate source voltage V 20 20 V GS V Gate source voltage AC (f >1Hz) 30 30 GS Power dissipation, T = 25C P 208 34.5 W C tot Operating and storage temperature T , T -55...+150 C j stg Rev. 3.0 Page 1 2007-08-30SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 V, I = 20.7 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 0.6 K/W Thermal resistance, junction - case thJC - - 3.6 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, wavesoldering T sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA - - V Drain-source breakdown voltage 650 (BR)DSS GS D V =0V, I =7A - 730 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =1000A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.1 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =13.1A Drain-source on-state resistance R GS D DS(on) T =25C - 0.16 0.19 j T =150C - 0.43 - j R f=1MHz, open drain - 0.54 - Gate input resistance G Rev. 3.0 Page 2 2007-08-30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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