SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor V 650 V DS Feature R 0.19 DS(on) New revolutionary high voltage technology I 20.7 A D Worldwide best R in TO 220 DS(on) PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconductance Type Package Ordering Code Marking 20N65C3 SPP20N65C3 PG-TO220 Q67040-S4556 20N65C3 SPA20N65C3 PG-TO220FP SP000216362 SPI20N65C3 PG-TO262 Q67040-S4560 20N65C3 Maximum Ratings Parameter Symbol Value Unit SPP I SPA Continuous drain current I A D 1) T = 25 C 20.7 20.7 C 1) T = 100 C 13.1 13.1 C Pulsed drain current, t limited by T I 62.1 62.1 A p jmax D puls Avalanche energy, single pulse E 690 690 mJ AS I =3.5A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 1 1 AR AR jmax I =7A, V =50V D DD Avalanche current, repetitive t limited by T I 7 7 A AR jmax AR Gate source voltage V 20 20 V GS V Gate source voltage AC (f >1Hz) 30 30 GS Power dissipation, T = 25C P 208 34.5 W C tot Operating and storage temperature T , T -55...+150 C j stg Rev. 3.0 Page 1 2007-08-30SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 V, I = 20.7 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 0.6 K/W Thermal resistance, junction - case thJC - - 3.6 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, wavesoldering T sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA - - V Drain-source breakdown voltage 650 (BR)DSS GS D V =0V, I =7A - 730 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =1000A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.1 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =13.1A Drain-source on-state resistance R GS D DS(on) T =25C - 0.16 0.19 j T =150C - 0.43 - j R f=1MHz, open drain - 0.54 - Gate input resistance G Rev. 3.0 Page 2 2007-08-30