SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor V 650 V DS Feature R 0.38 DS(on) New revolutionary high voltage technology I 11 A D Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPP11N65C3 PG-TO220 Q67040-S4557 11N65C3 SPA11N65C3 PG-TO220FP SP000216318 11N65C3 SPI11N65C3 PG-TO262 Q67040-S4561 11N65C3 Maximum Ratings Parameter Symbol Value Unit SPP I SPA Continuous drain current I A D 1) T = 25 C 11 11 C 1) T = 100 C 7 7 C Pulsed drain current, t limited by T I 33 33 A p jmax D puls Avalanche energy, single pulse E 340 340 mJ AS I =2.5A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.6 0.6 AR AR jmax I =4A, V =50V D DD Avalanche current, repetitive t limited by T I 4 4 A AR jmax AR Gate source voltage V 20 20 V GS V Gate source voltage AC (f >1Hz) GS 30 30 Power dissipation, T = 25C P 125 33 W C tot Operating and storage temperature T , T -55...+150 C j stg Rev. 2.91 Page 1 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 V, I = 11 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1 K/W Thermal resistance, junction - case thJC - - 3.8 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, wavesoldering T sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA - - V Drain-source breakdown voltage 650 (BR)DSS GS D Drain-Source avalanche V V =0V, I =4A - 730 - (BR)DS GS D breakdown voltage I =500A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.1 1 j T =150C - - 100 j Gate-source leakage current I V =20V, V =0V - - 100 nA GS DS GSS V =10V, I =7A Drain-source on-state resistance R GS D DS(on) T =25C - 0.34 0.38 j T =150C - 0.92 - j R f=1MHz, open drain - 0.86 - Gate input resistance G Rev. 2.91 Page 2 2009-11-30