SPA20N60CFD TM CoolMOS Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.22 W DS(on),max Intrinsic fast-recovery body diode 1) I 20.7 A D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated 0) Qualified for industrial grade applications according to JEDEC Pb-free lead plating RoHS compliant Type Package Ordering Code Marking SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD MMaaxximimuumm rraattininggss,, aatt TT ==2255 C,C, uunnlleessss ooththeerrwwiissee ssppeecciiffiieedd jj Parameter Symbol Conditions Value Unit 1) I T =25C 20.7 A Continuous drain current D C T =100C 13.1 C 2) I T =25C 52 Pulsed drain current D,pulse C E I =10A, V =50V Avalanche energy, single pulse 690 mJ AS D DD 2),3) E I =20A, V =50V 1 Avalanche energy, repetitive t AR D DD AR 2),3) I 20 Avalanche current, repetitive t A AR AR I =20.7A, D Drain source voltage slope dv /dt V =480V, 80 V/ns DS T =125C j Reverse diode dv /dt dv /dt I =20.7A, 40 V/ns S V =480V, DS 900 Maximum diode commutation speed di /dt A/s T =125C j V Gate source voltage static 20 V GS 30 AC (f >1 Hz) Power dissipation P T =25C 35 W tot C Operating and storage temperature T , T -55 ... +150 C j stg ReRevv.. 11.4.4 ppaaggee 11 22001122--0022--1199SPA20N60CFD Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.6 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, wave 1.6 mm (0.063 in.) T - - 260 C sold soldering from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =250A 600 - - V (BR)DSS GS D V V =0V, I =20A Avalanche breakdown voltage - 700 - (BR)DS GS D V V =V , I =1000A Gate threshold voltage 3 4 5 GS(th) DS GS D VV ==660000VV,, VV ==00VV,, DDSS GGSS II ZZeerroo ggaatete vvoolltataggee ddrraaiinn ccuurrrreenntt -- 22.1.1 -- AA DSS T =25C j V =600V, V =0V, DS GS - 1700 - T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS V =10V, I =13.1A, GS D R Drain-source on-state resistance - 0.19 0.22 W DS(on) T =25C j V =10V, I =13.1A, GS D - 0.43 - T =150C j R Gate resistance f =1MHz, open drain - 0.54 - G V >2 I R , DS D DS(on)max g Transconductance - 17.5 - S fs I =13.1A D ReRevv.. 11.4.4 ppaaggee 22 22001122--0022--1199