X-On Electronics has gained recognition as a prominent supplier of SPA12N50C3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPA12N50C3 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPA12N50C3 Infineon

SPA12N50C3 electronic component of Infineon
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See Product Specifications
Part No.SPA12N50C3
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 500V 11.6A TO220FP-3 CoolMOS C3
Datasheet: SPA12N50C3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 8.3773
10 : USD 2.8404
100 : USD 2.2775
500 : USD 1.9896
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Hts Code
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We are delighted to provide the SPA12N50C3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPA12N50C3 and other electronic components in the MOSFETs category and beyond.

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SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor V T 560 V DS jmax Feature R 0.38 DS(on) New revolutionary high voltage technology I 11.6 A D Ultra low gate charge PG-TO220-3-31 PG-TO262- PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 Ultra low effective capacitances 2 3 1 2 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO-220-3-31 -3-111: Fully isolated package (2500 VAC 1 minute) Type Package Ordering Code Marking 12N50C3 SPP12N50C3 PG-TO220 Q67040-S4579 12N50C3 SPI12N50C3 PG-TO262 Q67040-S4578 12N50C3 SPA12N50C3 PG-TO220FP SP000216322 Maximum Ratings Parameter Symbol Value Unit SPP I SPA Continuous drain current I A D 1) T = 25 C 11.6 11.6 C 1) T = 100 C 7 7 C Pulsed drain current, t limited by T I 34.8 34.8 A p jmax D puls Avalanche energy, single pulse E 340 340 mJ AS I =5.5A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.6 0.6 AR AR jmax I =11.6A, V =50V D DD Avalanche current, repetitive t limited by T I 11.6 11.6 A AR jmax AR Gate source voltageGate source voltage V 20 20 V GS V Gate source voltage AC (f >1Hz) 30 30 GS Power dissipation, T = 25C P 125 33 W C tot Operating and storage temperature T , T -55...+150 C j stg 7) Reverse diode dv/dt dv/dt 15 V/ns Page 1 Rev. 3.1 2009-11-30SPP12N50C3 SPI12N50C3, SPA12N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 400 V, I = 11.6 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1 K/W Thermal resistance, junction - case thJC - - 3.8 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, wavesoldering T sold 4) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA - - V Drain-source breakdown voltage 500 (BR)DSS GS D V =0V, I =11.6A - 600 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =500A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =500V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.1 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =7A Drain-source on-state resistance R GS D DS(on) T =25C - 0.34 0.38 j T =150C - 0.92 - j R f=1MHz, open drain - 1.4 - Gate input resistance G Page 2 Rev. 3.1 2009-11-30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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