X-On Electronics has gained recognition as a prominent supplier of SPA06N60C3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPA06N60C3 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPA06N60C3 Infineon

SPA06N60C3 electronic component of Infineon
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See Product Specifications
Part No.SPA06N60C3
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 650V 6.2A TO220FP-3 CoolMOS C3
Datasheet: SPA06N60C3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.4864
10 : USD 2.1787
30 : USD 1.9865
100 : USD 1.7885
500 : USD 1.6999
1000 : USD 1.6616
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.9603
10 : USD 2.8742
100 : USD 2.2972
500 : USD 1.8912
1000 : USD 1.795
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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We are delighted to provide the SPA06N60C3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPA06N60C3 and other electronic components in the MOSFETs category and beyond.

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SPA06N60C3 TM CoolMOS Power Transistor Product Summary Features V T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge 1) 6.2 A I D Periodic avalanche rated High peak current capability Ultra low effective capacitances P-TO220-3-31 Extreme dv /dt rated Improved transconductance Fully isolated package (2500 V AC 1 minute) Type Package Ordering Code Marking SPA06N60C3 PG-TO220-3-31 Q67040-S4631 06N60C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25 C 6.2 A Continuous drain current D C T =100 C 3.9 C 1) I T =25 C 18.6 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =3.1 A, V =50 V 200 mJ AS D DD 1),2) E I =6.2 A, V =50 V 0.5 Avalanche energy, repetitive t AR D DD AR 1) I 6.2 A Avalanche current, repetitive t AR AR I =6.2 A, V =480 V, D DS Drain source voltage slope dv /dt 50 V/ns T =125 C j Gate source voltage V 20 static V GS V AC (f >1 Hz) 30 GS P T =25 C 32 Power dissipation W tot C T , T Operating and storage temperature -55 ... 150 C j stg Rev. 1.3 page 1 2010-12-21 Rev 1.4 1 2017-08-17SPA06N60C3 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.92 K/W thJC Thermal resistance, junction - R leaded - - 80 thJA ambient 1.6 mm (0.063 in.) Soldering temperature T - - 260 C sold from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 600 - - V (BR)DSS GS D Avalanche breakdown voltage V V =0 V, I =6.2 A - 700 - (BR)DS GS D V V =V , I =0.26 mA Gate threshold voltage 2.1 3 3.9 GS(th) DS GS D V =600 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =600 V, V =0 V, DS GS - - 100 T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =3.9 A, GS D Drain-source on-state resistance R - 0.68 0.75 DS(on) T =25 C j V =10 V, I =3.9 A, GS D - 1.82 - T =150 C j R Gate resistance f =1 MHz, open drain - 1 - G V >2 I R , DS D DS(on)max Transconductance g - 5.6 - S fs I =3.9 A D Rev. 1.3 page 2 2010-12-21 Rev 1.4 2 2017-08-17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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