MOSFET Power, Single N-Channel 40 V, 3.1 m , 107 A NVTFS5C453NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(ON) D NVTFS5C453NLWF Wettable Flanks Product 3.1 m 10 V 40 V 107 A AECQ101 Qualified and PPAP Capable 5.2 m 4.5 V These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J D (5) Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS G (4) Continuous Drain T = 25C I 107 A C D Current R JC T = 100C 75 (Notes 1, 3) C Steady S (1,2,3) State Power Dissipation T = 25C P 68 W C D NCHANNEL MOSFET R (Note 1) JC T = 100C 34 C Continuous Drain T = 25C I 23 A A D MARKING Current R JA DIAGRAM T = 100C 16 (Notes 1, 2, 3) A Steady 1 State Power Dissipation T = 25C P 3.3 W A D 1 S D R (Notes 1 & 2) JA XXXX T = 100C 1.6 S D A WDFN8 AYWW S D Pulsed Drain Current I 740 A T = 25C, t = 10 s ( 8FL) A p DM G D CASE 511AB Operating Junction and Storage Temperature T , T 55 to C J stg +175 XXXX = Specific Device Code Source Current (Body Diode) I 76 A S A = Assembly Location Y = Year Single Pulse DraintoSource Avalanche E 215 mJ AS WW = Work Week Energy (I = 7 A) L(pk) = PbFree Package Lead Temperature for Soldering Purposes T 260 C L (Note: Microdot may be in either location) (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 2.2 C/W JC JunctiontoAmbient Steady State (Note 2) R 46 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2020 Rev. 3 NVTFS5C453NL/DNVTFS5C453NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 1.6 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 60 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.3 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 40 A 2.6 3.1 DS(on) GS D m V = 4.5 V I = 40 A 4.1 5.2 GS D Forward Transconductance g V = 15 V, I = 40 A 120 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 2100 ISS Output Capacitance C 1000 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 42 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 40 A 35 G(TOT) GS DS D Total Gate Charge Q 16 G(TOT) Threshold Gate Charge Q 4.0 nC G(TH) GatetoSource Charge Q 7.0 V = 4.5 V, V = 20 V I = 40 A GS GS DS D GatetoDrain Charge Q 5.0 GD Plateau Voltage V 3.2 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 11 d(ON) Rise Time t 110 r V = 4.5 V, V = 20 V, GS DS ns I = 40 A, R = 2.5 D G TurnOff Delay Time t 21 d(OFF) Fall Time t 5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.84 1.2 SD J V = 0 V, GS V I = 40 A S T = 125C 0.72 J Reverse Recovery Time t 41 RR Charge Time t 19 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 40 A S Discharge Time t 22 b Reverse Recovery Charge Q 30 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2