PD - 95093A IRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses D Minimizes Parallel MOSFETs for high current applications 100% R Tested G Lead-Free G Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance D-Pak S of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC- DC converters that power the latest generation of microprocessors. DEVICE CHARACTERISTICS The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including IRLR8103V R , gate charge and Cdv/dt-induced turn-on immunity. DS(on) 7.9 m R DS(on) The IRLR8103V offers an extremely low combination of Q & R for reduced losses in both control and Q 27 nC sw DS(on) G synchronous FET applications. Q 12 nC SW The package is designed for vapor phase, infra-red, Q 29nC OSS convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Symbol IRLR8103V Units V 30 Drain-Source Voltage DS V V 20 Gate-Source Voltage GS Continuous Drain or Source Current TC = 25C 91 I D (V > 10V) A TC= 90C GS 63 I Pulsed Drain Current 363 DM TC = 25C 115 Power Dissipation P W D TC = 90C 60 Junction & Storage Temperature Range T , T -55 to 150 C J STG Continuous Source Current (Body Diode) I 91 S A Pulsed Source Current I SM 363 Thermal Resistance Parameter Symbol Typ. Max. Units R Maximum Junction-to-Ambient 50 JA C/W R Maximum Junction-to-Case 1.09 JC www.irf.com 1 12/0604 IRLR8103VPbF Electrical Characteristics Parameter Symbol Min Typ Max Units Conditions Drain-to-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D R V = 10V, I = 15A Static Drain-Source 6.9 9.0 GS D DS(on) m V = 4.5V, I = 15A On-Resistance 7.9 10.5 GS D V = V , I = 250A Gate Threshold Voltage V 1.0 3.0 V DS GS D GS(th) I V = 30V, V = 0V Drain-to-Source Leakage Current 50 A DS GS DSS V = 24V, V = 0 20 DS GS A V = 24V, V = 0, T = 100C DS GS J 100 I V = 20V Gate-Source Leakage Current 100 nA GS GSS V = 5V, I = 15A, V = 16V Total Gate Charge, Control FET Q 27 G GS D DS Total Gate Charge, Synch FET Q 23 V = 5V, V < 100mV G GS DS Q Pre-Vth Gate-Source Charge 4.7 GS1 Post-Vth Gate-Source Charge Q 2.0 nC GS2 V = 16V, I = 15A DS D Gate to Drain Charge Q 9.7 GD Switch Charge (Q + Q)Q 12 gs2 gd SW V = 16V, V = 0 Output Charge Q 29 DS GS OSS Gate Resistance R 0.8 3.1 G t Turn-On Delay Time 10 V = 16V d(on) DD Rise Time t 9 I = 15A r D ns Turn-Off Delay Time t 24 V = 5.0V d(off) GS t Fall Time 18 Clamped Inductive Load f Input Capacitance C 2672 iss V = 16V, V =0 Output Capacitance C 1064 pF oss GS GS C Reverse Transfer Capacitance 109 rss Source-Drain Rating & Characteristics Parameter Symbol Min Typ Max Units Conditions V IS = 15A , V = 0V Diode Forward Voltage GS SD 0.9 1.3 V Reverse Recovery Charge Q 103 nC di/dt ~ 700A/s rr V = 16V, V = 0V, I = 15A DS GS F Q Reverse Recovery Charge 96 nC di/dt = 700A/s , (with 10BQ040) rr(s) (with Parallel Schottky) V = 16V, V = 0V, I = 15A DS GS F Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss Typical values of R (on) measured at V = 4.5V, Q , Q and Q measured at V = 5.0V, I = 15A. DS GS G SW OSS GS F 2 www.irf.com