X-On Electronics has gained recognition as a prominent supplier of IRL5NJ7404 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRL5NJ7404 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRL5NJ7404 Infineon

IRL5NJ7404 electronic component of Infineon

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Part No.	IRL5NJ7404
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET High power MOSFET optimized for Automotive Ignition System (AIS)
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

IRL5NJ7404 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 MOQ : 50 Multiples : 1	50 : USD 131.5724 100 : USD 113.6499 250 : USD 106.4291		N/A

We are delighted to provide the IRL5NJ7404 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRL5NJ7404 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IRL5NJ7404 is an Insulated Gate Bipolar Transistor (IGBT) produced by Infineon. It is a low-loss IGBT that is rated to withstand high voltages up to 1200 V and is suitable for a wide range of applications including power control and switching. The IGBT has a low forward voltage drop and a high fall time, making it suitable for applications operating at high current rates such as motor drives and switch mode power supplies. The IGBT can operate in temperatures ranging from -55 to 150C, and its highly reliable construction ensures that it can be used for long periods of time in demanding environments.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
Id - Continuous Drain Current - 11 A - 11 A
Vds - Drain-Source Breakdown Voltage - 20 V - 20 V
Rds On - Drain-Source Resistance 40 mOhms 40 mOhms
Transistor Polarity P - Channel P - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 50 W 50 W
Mounting Style Smd/Smt Smd/Smt
Package / Case SMD - 1 - 3 SMD - 1 - 3
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 12 V 12 V
Channel Mode Enhancement Enhancement
Configuration Single Single
Height 3.58 mm 3.58 mm
Length 16 mm 16 mm
Transistor Type 1 P - Channel 1 P - Channel
Width 11.55 mm 11.55 mm
Brand Infineon Infineon
Fall Time 90 ns 90 ns
Rise Time 150 ns 150 ns
Typical Turn-Off Delay Time 65 ns 65 ns
Typical Turn-On Delay Time 20 ns 20 ns