IRLR7821PbF IRLU7821PbF HEXFET Power MOSFET Applications V R max Qg High Frequency Synchronous Buck DSS DS(on) Converters for Computer Processor Power 30V 10m 10nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits Very Low RDS(on) at 4.5V V GS D-Pak I-Pak Ultra-Low Gate Impedance IRLR7821PbF IRLU7821PbF Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 65 GS D C Continuous Drain Current, V 10V 47 I T = 100C GS A D C Pulsed Drain Current I 260 DM P T = 25C Maximum Power Dissipation 75 D C W P T = 100C Maximum Power Dissipation 37.5 C D Linear Derating Factor 0.50 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 2.0 Junction-to-Ambient (PCB Mount) R 50 C/W JA R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 10/02/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T DSS J Breakdown Voltage Temp. Coefficient 23 mV/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 7.5 10 V = 10V, I = 15A GS D 9.5 12.5 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D V Gate Threshold Voltage Coefficient -5.3 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 46 S V = 15V, I = 12A DS D Q Total Gate Charge 10 14 g Q Pre-Vth Gate-to-Source Charge 2.0 V = 16V gs1 DS Q gs2 Post-Vth Gate-to-Source Charge 1.2 nC V = 4.5V GS Q gd Gate-to-Drain Charge 2.5 I = 12A D Q godr Gate Charge Overdrive 4.3 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 3.7 Q oss Output Charge 8.5 nC V = 16V, V = 0V DS GS t Turn-On Delay Time 11 V = 15V, V = 4.5V d(on) DD GS t r Rise Time 4.2 I = 12A D t d(off) Turn-Off Delay Time 10 ns Clamped Inductive Load t f Fall Time 3.2 C iss Input Capacitance 1030 V = 0V GS C oss Output Capacitance 360 pF V = 15V DS C Reverse Transfer Capacitance 120 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 230 mJ Avalanche Current I AR 12 A Repetitive Avalanche Energy E 7.5 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions 65 I D S Continuous Source Current MOSFET symbol (Body Diode) A showing the G I SM Pulsed Source Current 260 integral reverse S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V SD J S GS t rr Reverse Recovery Time 26 38 ns T = 25C, I = 12A, V = 15V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 15 23 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com