% && () * + + , % & ( ) ( % % * % +, % - % ) % TM ( % Micro3 . ( , &/0 - * % +, % 1 - ) (( + 0) % ( % 23 3 + 0 % ( *4+4 . % & ( ) * + , - + ) . / 0 1 2 + 0 30 4 + - ) &% 2 ) 5 / 2 6 7 & & 4 + &8 999 www.irf.com 1 - + : 1 ) 999 999 : 1 ) &% << + 999 999 & 2 < + /& 999 999 / 2 - + - + B 2 + 999 999 / , = = ) 999 / ) * + + + 999 999 - / / 999 999 / / - + ( 1 ) 999 999 / / , - + * ( 1 ) 999 999 / / , - + 2 0 ( 1 ) 999 999 / / > , = ) 999 / > , - + = ) 999 / > , 6 A = ) 999 / / - * ) B 3 & 999 / 999 / 2 & 999 / 999 / B<< 3 & 999 999 2 * & 999 999 2 / , - * ) / % % + + 999 999 B % % + + 999 999 %* / 2 0 < % + + 999 999 C / 6DE - * ) % Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 999 999 (Body Diode) showing the G ISM Pulsed Source Current integral reverse 999 999 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -0.61A, V = 0V SD J S GS t Reverse Recovery Time 35 53 ns T = 25C, I = -0.61A rr J F Q Reverse Recovery Charge 26 39 nC di/dt = -100A/s rr 2 % 0 )F % = = F 3 +3+ H & 83 & 7 G + &% - < ) // A - < + & *2 8 + I / SD / www.irf.com 2