NVTFS4C08NTWG ON Semiconductor

NVTFS4C08N Power MOSFET 30 V, 5.9 m , 55 A, Single NChannel, 8FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NVTFS4C08N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 30 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V / 13.8 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.3 2.2 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 4.7 5.9 DS(on) GS D m V = 4.5 V I = 18 A 7.2 9.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 42 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1113 ISS Output Capacitance C 702 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 39 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.035 RSS ISS GS DS Total Gate Charge Q 8.4 G(TOT) Threshold Gate Charge Q 1.8 G(TH) nC GatetoSource Charge Q 3.5 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 3.3 GD Gate Plateau Voltage V 3.4 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9.0 d(ON) Rise Time t 33 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 15 d(OFF) Fall Time t 4.0 f TurnOn Delay Time t 7.0 d(ON) Rise Time t 26 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 19 d(OFF) Fall Time t 3.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.79 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.66 J Reverse Recovery Time t 28.3 RR Charge Time t 14.5 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 13.8 b Reverse Recovery Charge Q 15.3 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.