IPD30N03S4L-14 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 13.6 m DS(on),max I 30 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S4L-14 PG-TO252-3-11 4N03L14 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25 C, V =10 V 30 A Continuous drain current D C GS T =100 C, C 27 2) V =10 V GS 2) I T =25 C 120 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =30 A 16 mJ AS D I T =25 C Avalanche current, single pulse 30 A AS C V Gate source voltage 16 V GS Power dissipation P T =25 C 31 W tot C Operating and storage temperature T , T -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 2.1 page 1 2008-04-18IPD30N03S4L-14 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 4.9 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =10 A Gate threshold voltage 1.0 1.5 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 1000 2) T =125 C j V =18 V, V =0 V, DS GS -5 60 2) T =85 C j I V =16 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =15 A - 16.1 20.5 m DS(on) GS D V =10 V, I =30 A - 11.2 13.6 GS D Rev. 2.1 page 2 2008-04-18