NVTFS4824N MOSFET Power, Single N-Channel 30 V, 4.7 m , 46 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(on) D NVTFS4824NWF Wettable Flanks Product 4.7 m 10 V 30 V 46 A AECQ101 Qualified and PPAP Capable 7.5 m 4.5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant NChannel MAXIMUM RATINGS (T = 25C unless otherwise noted) D (5 8) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS G (4) Continuous Drain Cur- T = 25C I 46 A mb D rent R (Notes 1, J mb S (1, 2, 3) T = 100C 33 2, 3, 4) mb Steady State Power Dissipation P W T = 25C 21 mb D MARKING DIAGRAM R (Notes 1, 2, 3) J mb T = 100C 11 mb 1 Continuous Drain Cur- T = 25C I 18.2 A 1 A D S D rent R (Notes 1, 3, JA XXXX WDFN8 S D T = 100C 12.8 & 4) A Steady AYWW ( 8FL) S D State G D Power Dissipation T = 25C P 3.2 W CASE 511AB A D R (Notes 1, 3) JA T = 100C 1.6 A XXXX = Specific Device Code Pulsed Drain Current T = 25C, t = 10 s I 402 A A p DM A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C J stg Y = Year 175 WW = Work Week = PbFree Package Source Current (Body Diode) I 21 A S (Note: Microdot may be in either location) Single Pulse DraintoSource Avalanche E 72 mJ AS Energy (T = 25C, V = 50 V, V = 10 V, J DD GS I = 38 A, L = 0.1 mH, R = 25 ) L(pk) G Lead Temperature for Soldering Purposes T 260 C L ORDERING INFORMATION (1/8 from case for 10 s) See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit JunctiontoMounting Board (top) Steady R 7.2 C/W J mb State (Notes 2 and 3) JunctiontoAmbient Steady State (Note 3) R 47 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2019 Rev. 3 NVTFS4824N/DNVTFS4824N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 30 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 23 A 3.5 4.7 m DS(on) GS D V = 4.5 V, I = 23 A 5.7 7.5 GS D Forward Transconductance g V = 1.5 V, I = 20 A 56 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1740 pF iss Output Capacitance C 360 V = 0 V, f = 1.0 MHz, V = 12 V oss GS DS Reverse Transfer Capacitance C 200 rss Total Gate Charge Q 14 nC G(TOT) Threshold Gate Charge Q 1.6 G(TH) V = 4.5 V, V = 15 V, I = 23 A GS DS D GatetoSource Charge Q 5.3 GS GatetoDrain Charge Q 5.5 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 23 A 29 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12 ns d(on) Rise Time t 27 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 20 d(off) Fall Time t 6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.81 1.1 V SD GS J I = 23 A S T = 125C 0.69 J Reverse Recovery Time t 19 ns RR V = 0 V, Charge Time t GS 9.1 a dI /dt = 100 A/ s, S Discharge Time t 9.6 b I = 23 A S Reverse Recovery Charge Q 8.8 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2