X-On Electronics has gained recognition as a prominent supplier of NVTFS4C06NTWG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVTFS4C06NTWG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVTFS4C06NTWG ON Semiconductor

NVTFS4C06NTWG electronic component of ON Semiconductor
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Part No.NVTFS4C06NTWG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 71A Automotive 8-Pin WDFN EP T/R
Datasheet: NVTFS4C06NTWG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1115: USD 0.2746 ea
Line Total: USD 306.18 
Availability - 0
MOQ: 1115  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1115
Multiples : 1
1115 : USD 0.2746

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.936
10 : USD 1.243
25 : USD 1.155
100 : USD 0.8866
250 : USD 0.8459
500 : USD 0.7282
1000 : USD 0.671
5000 : USD 0.6446

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 5000
Multiples : 5000
5000 : USD 0.5228

   
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We are delighted to provide the NVTFS4C06NTWG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVTFS4C06NTWG and other electronic components in the MOSFETs category and beyond.

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NVTFS4C06N MOSFET Power, Single N-Channel, 8FL 30 V, 4.2 m , 71 A Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NVTFS4C06N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 14.4 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 3.4 4.2 DS(on) GS D m V = 4.5 V I = 30 A 4.9 6.1 GS D Forward Transconductance g V = 1.5 V, I = 15 A 58 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1683 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 15 V 841 pF OSS GS DS Reverse Transfer Capacitance C 40 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.023 RSS ISS GS DS Total Gate Charge Q 11.6 G(TOT) Threshold Gate Charge Q 2.6 G(TH) nC GatetoSource Charge Q 4.7 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 4.0 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 26 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10 d(ON) Rise Time t 32 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 18 d(OFF) Fall Time t 5.0 f TurnOn Delay Time t 8.0 d(ON) Rise Time t 28 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 24 d(OFF) Fall Time t 3.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.63 J Reverse Recovery Time t 34 RR Charge Time t 17 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 17 b Reverse Recovery Charge Q 22 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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