X-On Electronics has gained recognition as a prominent supplier of MCH3476-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCH3476-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCH3476-TL-H ON Semiconductor

MCH3476-TL-H electronic component of ON Semiconductor
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See Product Specifications
Part No.MCH3476-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NCH 1.8V DRIVE SERIES
Datasheet: MCH3476-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 6000
Multiples : 3000
6000 : USD 0.1035
60000 : USD 0.0991
600000 : USD 0.0972
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1665
N/A

Obsolete
0

Multiples : 6000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1727
10 : USD 0.9617
100 : USD 0.2629
500 : USD 0.1988
1000 : USD 0.156
3000 : USD 0.1357
9000 : USD 0.1293
24000 : USD 0.124
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCH3476-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH3476-TL-H and other electronic components in the MOSFETs category and beyond.

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LOTNo. LOTNo. MCH3476 Power MOSFET www.onsemi.com 20V, 125m , 2A, Single N-Channel Features V R (on) Max I DSS DS D Max Low On-Resistance 125m 4.5V 1.8V Drive 20V 190m 2.5V 2A ESD Diode-Protected Gate 310m 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol Value 3 Drain to Source Voltage V 20V DSS Gate to Source Voltage V 12 V GSS Drain Current (DC) I 2A D Drain Current (Pulse) 1 1:Gate A I 8 DP 2:Source PW10s, duty cycle1% 3:Drain Power Dissipation When mounted on ceramic substrate P 0.8W D 2 2 (900mm 0.8mm) C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 Packing Type : TL Marking Thermal Resistance Ratings FH Parameter Symbol Value Unit Junction to Ambient TL C/W When mounted on ceramic substrate R 156.2 JA FH:DeviceCode 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 2 MCH3476/D MCH3476 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=1A 1.9 S FS DS D R(on)1 I =1A, V=4.5V 93 125m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.5A, V=2.5V 135 190m DS D GS R(on)3 I =0.3A, V=1.8V 200 310m DS D GS Input Capacitance Ciss 128 pF Output Capacitance Coss V =10V, f=1MHz 28 pF DS Reverse Transfer Capacitance Crss 21 pF Turn-ON Delay Time t (on) 5.1 ns d Rise Time t 11 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 14.5 ns d Fall Time t 12 ns f Total Gate Charge Qg 1.8 nC Gate to Source Charge Qgs V =10V, V =4.5V, I =2A 0.3 nC DS GS D Gate to Drain Miller Charge Qgd 0.55 nC Forward Diode Voltage V I =2A, V=0V 0.85 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =10V V DD IN 4.5V 0V I =1A D V IN R =10 L D V OUT PW=10s D.C.1% G MCH3476 P.G 50 S www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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