IAUT240N08S5N019 OptiMOS-5 Power-Transistor Product Summary V 80 V DS R 1.9 m DS(on) I 240 A D Features N-channel - Enhancement mode P/G-HSOF-8-1 Tab AEC qualified MSL1 up to 260C peak reflow 8 1 175C operating temperature Tab Green product (RoHS compliant) 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking P/G-HSOF-8-1 5N08019 IAUT240N08S5N019 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 240 A D C GS T =100 C, C 173 2) V =10 V GS 2) I T =25 C 960 Pulsed drain current D,pulse C 2) E I =120 A 400 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 240 A AS Gate source voltage V-20V GS P T =25 C Power dissipation 230 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-07-20IAUT240N08S5N019 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.65 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0 V, GS 2) V 80 - - V Drain-source breakdown voltage (BR)DSS I =1 mA D Gate threshold voltage V V =V , I =160 A 2.2 3 3.8 GS(th) DS GS D V =80 V, V =0 V, DS GS 2) I -0.1 1 A Zero gate voltage drain current DSS T =25 C j V =40 V, V =0 V, DS GS -1 20 2) T =85 C j I V =20 V, V =0 V - - 100 nA Gate-source leakage current GSS GS DS Drain-source on-state resistance R V =6 V, I =60 A -2.0 3.0m DS(on) GS D V =10 V, I =100 A -1.5 1.9 GS D Rev. 1.0 page 2 2017-07-20