ARF466FL(G) D ARF466FL G S RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466FL is a rugged high voltage RF power transistor designed for scienti c, commercial, medical and industrial RF power ampli er applications up to 45 MHz. It has been optimized for both linear and high ef ciency classes of operation. Low Cost Flangeless RF Package. Speci ed 150 Volt, 40.68 MHz Characteristics: Low Vth thermal coef cient. Output Power = 300 Watts. Low Thermal Resistance. Gain = 16dB (Class AB) Optimized SOA for Superior Ruggedness. Ef ciency = 75% (Class C) Maximum Ratings All Ratings: T =25C unless otherwise speci ed C Symbol Parameter Ratings Unit V Drain-Source Voltage 1000 DSS V V Drain-Gate Voltage 1000 DGO I Continuous Drain Current T = 25C 13 A D C V GS Gate-Source Voltage 30 V P Total Power Dissipation T = 25C 1153 W D C T , T Operating and Storage Junction Temperature Range -55 to 175 J STG C T L Lead Temperature: 0.063 from Case for 10 Sec. 300 Static Electrical Characteristics Symbol Parameter Min Typ Max Unit BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 1000 V DSS GS D 1 , R Drain-Source On-State Resistance (V = 10V I = 6.5A) 1.0 ohms DS(ON) GS D Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 250 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS DS DS g Forward Transconductance (V = 25V, I = 6.5A) 3.3 7 9 mhos fs DS D V Gate Threshold Voltage (V = V , I = 1mA) 2 4 Volts GS(TH) DS GS D Thermal Characteristics Symbol Parameter Min Typ Max Unit R Junction to Case 0.13 JC C/W R Junction to Sink (High Ef ciency Thermal Joint Compound and Planar Heat Sink Surface.) 0.27 JHS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS ARF466FL(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 2000 Input Capacitance iss V = 0V GS C pF Output Capacitance 165 V = 150V oss DS f = 1 MHz C Reverse Transfer Capacitance 75 rss t Turn-on Delay Time 12 d(on) V = 15V GS t Rise Time V = 500 V 10 r DD ns I = 13A 25C t Turn-off Delay Time 43 D d(off) R = 1.6W t Fall Time G 10 f FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Ampli er Power Gain f = 40.68 MHz 14 16 dB PS V = 2.5V V = 150V Drain Ef ciency 70 75 % h GS DD P = 300W y out Electrical Ruggedness VSWR 10:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380S, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 30 10,000 Class C V = 150V DD 25 P = 150W C out iss 20 1000 500 C oss 15 C 10 100 rss 50 5 10 0 30 45 60 75 90 105 120 .1 1 10 100 200 FREQUENCY (MHz) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 20 52 V > I (ON) x R (ON)MAX. DS D DS OPERATION HERE 18 250 SEC. PULSE TEST LIMITED BY R (ON) DS <0.5 % DUTY CYCLE 100uS 16 T = -55C J 10 14 5 12 10 1mS 8 1 10mS 6 .5 T = -55C J 4 100mS T =+25C C T = +25C J T =+175C 2 J T = +125C SINGLE PULSE J .1 0 0 1 2 3 4 5 6 7 8 1 10 100 1000 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 050-4928 Rev D 5-2010 I , DRAIN CURRENT (AMPERES) GAIN (dB) D I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf) D