ARF466A(G) ARF466B(G) TO-264 Common Source RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push- pull scienti c, commercial, medical and industrial RF power ampli er applications up to 45 MHz. They have been optimized for both linear and high ef ciency classes of operation. Low Cost Common Source RF Package. Speci ed 150 Volt, 40.68 MHz Characteristics: Low Vth thermal coef cient. Output Power = 300 Watts. Low Thermal Resistance. Gain = 16dB (Class AB) Optimized SOA for Superior Ruggedness. Ef ciency = 75% (Class C) MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter ARF466A B(G) UNIT V Drain-Source Voltage 1000 DSS Volts V Drain-Gate Voltage 1000 DGO I Continuous Drain Current T = 25C Amps 13 D C V Gate-Source Voltage Volts 30 GS Total Power Dissipation T = 25C P Watts 357 C D Junction to Case R C/W 0.35 JC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 1000 Volts DSS GS D 1 , ) R Drain-Source On-State Resistance (V = 10V I = 6.5A ohms 1.0 DS(ON) GS D Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 250 DS GS C Gate-Source Leakage Current (V = 30V, V = 0V) I 100 nA GS DS GSS g Forward Transconductance (V = 25V, I = 6.5A) mhos 3.3 7 9 fs DS D Gate Threshold Voltage (V = V , I = 1mA) Volts V (TH) 2 4 DS GS D GS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS ARF466A B(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 2000 Input Capacitance iss V = 0V GS C pF Output Capacitance 165 V = 150V oss DS f = 1 MHz C Reverse Transfer Capacitance 75 rss t Turn-on Delay Time 12 d(on) V = 15V GS t Rise Time V = 500 V 10 r DD ns I = 13A 25C t Turn-off Delay Time 43 D d(off) R = 1.6W t Fall Time G 10 f FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Ampli er Power Gain f = 40.68 MHz 14 16 dB PS V = 2.5V V = 150V Drain Ef ciency 70 75 % GS DD P = 300W out Electrical Ruggedness VSWR 10:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380S, Duty Cycle < 2% APT Reserves the right to change, without notice, the speci cations and information contained herein. 30 10,000 Class C V = 150V DD 25 P = 150W C out iss 20 1000 500 C oss 15 C 10 100 rss 50 5 10 0 30 45 60 75 90 105 120 .1 1 10 100 200 FREQUENCY (MHz) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 20 52 V > I (ON) x R (ON)MAX. DS D DS OPERATION HERE 18 250 SEC. PULSE TEST LIMITED BY R (ON) DS <0.5 % DUTY CYCLE 100uS 16 T = -55C J 10 14 5 12 10 1mS 8 1 10mS 6 .5 T = -55C J 4 100mS T =+25C C T = +25C J T =+150C 2 J T = +125C SINGLE PULSE J .1 0 0 1 2 3 4 5 6 7 8 1 10 100 1000 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 050-4925 Rev D 7-2009 I , DRAIN CURRENT (AMPERES) GAIN (dB) D I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf) D